Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells

Tsao, Chao-Yang; Huang, Jialiang; Hao, Xiaojing; Campbell, P.; Green, Martin A.

doi:10.1016/j.solmat.2010.12.003

Cited by 50 publications

(39 citation statements)

References 30 publications

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“…[4][5][6][7][8] The most promising usage of such high-performance Ge-CMOS is to integrate it into Si large-scale integrated circuits (LSIs) or flat-panel displays. To achieve this, low-temperature Ge-on-insulator (GOI) technology has been developed, including solid-phase crystallization (SPC), [9][10][11][12][13] laser annealing, [14][15][16][17][18] chemical vapor deposition, 19,20 flash-lamp annealing, 21 the seed layer technique, 22 and metal-induced crystallization. [23][24][25][26][27] Using the resulting polycrystalline (poly-) Ge layers, p/n-channel MOSFETs 12,13,17,21,27 and even CMOS operation have been successfully demonstrated.…”

mentioning

confidence: 99%

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

Takahara

Moto

Imajo

et al. 2019

Applied Physics Letters

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Low-temperature synthesis of polycrystalline (poly-) Ge on insulators is a key technology to integrate Ge-CMOS into existing devices. However, Fermi level control in poly-Ge has been difficult because poly-Ge has remained naturally highly p-type due to its defect-induced acceptors. We investigated the formation of n-type poly-Ge (thickness: 100-500 nm) using the advanced solid-phase crystallization technique with Sb-doped densified precursors. Sb doping on the order of 10 20 cm À3 facilitated lateral growth rather than nucleation in Ge, resulting in large grains exceeding 15 lm at a low growth temperature (375 C). The subsequent heat treatment (500 C) provided the highest electron mobility (200 cm 2 /V s) and the lowest electron density (5 Â 10 17 cm À3) among n-type poly-Ge directly grown on insulators. These findings will provide a means for the monolithic integration of high-performance Ge-CMOS into Si-LSIs and flat-panel displays.

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mentioning

confidence: 99%

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

Takahara

Moto

Imajo

et al. 2019

Applied Physics Letters

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“…Low‐temperature deposition of poly‐crystalline germanium (poly‐Ge) thin films on amorphous substrates has important device applications such as thin‐film transistor and solar cells . Because Ge has higher carrier mobility and lower crystallization temperature than silicon, Ge thin films can be used in thin film transistor applications instead of silicon .…”

Section: Introductionmentioning

confidence: 99%

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Kabaçelik

Kulakçı

Turan

et al. 2018

Surface & Interface Analysis

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Gold-induced (Au-) crystallization of amorphous germanium (α-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films yielded crystallization at temperature as low as 300°Cfor 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current-voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm −1 for annealed samples grown on aluminum-doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge-based electronic and photovoltaic applications.

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“…Polycrystalline germanium (poly-Ge) thin films on insulators have attracted the attention of many researchers to realize next-generation electronic devices, such as system-in-displays, three-dimensional integrated circuits, and multijunction thin-film solar cells. [1][2][3][4] Researchers have developed the following growth techniques for poly-Ge thin films on insulators: magnetron sputtering, 4) chemical vapor deposition, 5) laser annealing, 6,7) and solid-phase crystallization (SPC). 8,9) Those poly-Ge thin films, however, consist of small grains (< 1 μm) and their carrier mobilities are limited to 140 cm 2 V -1 s -1 .…”

Section: Introductionmentioning

confidence: 99%

Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

Yoshimine¹,

Toko²,

Suemasu³

2017

Jpn. J. Appl. Phys.

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Metal-induced layer exchange (MILE) is an advanced crystallization technique for fabricating high-quality semiconductor thin films on insulating substrates at low temperatures. Here, we focused on Ag as a catalytic metal for crystallizing amorphous germanium thin films on glass through MILE. The layer exchange between Ag and aGe was not simple because Ag diffused into aGe so fast that it crystallized the top aGe layer before the completion of layer exchange. To suppress Ag diffusion into aGe , we explored the kind of interlayer material between them as well as the growth temperature. Preparing SiO2 and GeO2 interlayers allowed for a complete layer exchange, resulting in the formation of polycrystalline Ge thin films on glass at temperatures as low as 250 °C. These findings are essential for further understanding and controlling the layer exchange phenomenon.

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Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells

Cited by 50 publications

References 30 publications

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

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