Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing

Hatakeyama, Shinji; Itoh, Yoshinori; Kawashima, Tomoyuki; Washio, Katsuyoshi

doi:10.1016/j.mee.2013.12.026

Cited by 7 publications

(1 citation statement)

References 13 publications

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“…In the case of sequential deposition of C and Ge on Si (Ge/C 1 /Si structure) at low temperature and subsequent annealing, it was confirmed that Si-C bonds promoted the formation of Ge dots through solid-phase epitaxy (12). In the case of a C 2 /Ge/Si structure, an incorporation of C atoms into the Ge layer during annealing induced the decrease in the bulk free energy of Ge due to the formation of Ge-C bonds in a nucleation process, and led to scale down dots and increase the dot density (13).…”

Section: Introductionmentioning

confidence: 93%

Self-Assemble Formation of Ge Dots on Si(100) via C/Ge/C/Si Structure

2015

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Formation of Ge dots via C2/Ge/C1/Si structure through solid-phase epitaxy by subsequent annealing at 650C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of Ge/C1/Si structure. This suggests that Si-C bonds at Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of C2/Ge/C1/Si structure was 1.3 times lager and 0.6 times lower than those of Ge/C1/Si structure in the case of C1 = 0.5 ML. As a result, it was found that Ge dots became large due to interference with the effect of reducing dot size in Ge/C1/Si structure.

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Section: Introductionmentioning

confidence: 93%