Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

Abstract

Articles you may be interested inGrowth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

“…This results in a nonuniform growth rate across the substrate [1,2], with adjacent regions having different thicknesses and compositions which, for semiconductors, produces spatially-varying band gaps and, hence, carrier confinement [2]. Etched patterns can be used to channel mobile surface species to predetermined regions of a substrate, yielding uniform arrays of low-dimensional nanostructures [2][3][4][5][6][7][8][9].…”

“…The foregoing scenario is the basis for forming quantum wires (QWRs) at V-grooves [2,5] and quantum dots (QDs) at inverted pyramids [9] during metalorganic vapor-phase epitaxy (MOVPE) on etched GaAs substrates. These nanostructures are called ''self-limiting'' [10] because they result from the balance between the greater inherent growth rate of the side facets and capillarity, which favors growth on the bottom facet.…”

Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

“…Our results provide a comprehensive phenomenological understanding of the self-ordering mechanism on patterned surfaces which can be harnessed for designing the quantum optical properties of low-dimensional systems. The epitaxial growth of low-dimensional nanostructures on nonplanar substrates has led to the wide-ranging synthesis of integrated optoelectronic and quantum optics building blocks [1][2][3][4][5][6] by exploiting the variations of the growth rates on the exposed crystallographic planes. The actual material composition can be modulated through growth conditions mediated by kinetics, delivering spatially controllable confinement and, therefore, tuneable electro-optical properties.…”

Si Based Nanostructure Growth Subsystem with Atomic Scale Control. Supersonic Molecular Beam Array Cell

“…The precise control of this effect can lead to nanoscale structures at the top of the mesa (a template e.g., subsequent growth of quantum dots), thereby achieving lateral confinement. (Most previous efforts had focused on re-growth of AlGaAs/GaAs on predefined mesa stripes [1][2][3][4] but ours is a single and simpler process). In applications, Si-based nanostructures are especially important, as Si technology is the primary driver for microelectronics.…”