Formation of epitaxial Al2O3/NiAl(110) films: aluminium deposition

Lykhach, Yaroslava; Moroz, V. G.; Yoshitake, Michiko

doi:10.1016/j.apsusc.2004.09.041

Cited by 13 publications

(8 citation statements)

References 13 publications

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“…The real space lattice constants of the oxide unit cell were determined to be 10.5 Å and 17.9 Å , with an a of 89.5°. These results are in good agreement with previously reported LEED [38] and RHEED results [39] for the 5 Å film on NiAl (1 1 0). The STM image (Fig.…”

Section: Characterization Of Oxide Films Formed In Uhvsupporting

confidence: 93%

Reactivities of ultrathin alumina films exposed to intermediate pressures of H2O: Substrate-mediated mechanism for growth and loss of surface order

et al. 2007

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Section: Characterization Of Oxide Films Formed In Uhvsupporting

confidence: 93%

Reactivities of ultrathin alumina films exposed to intermediate pressures of H2O: Substrate-mediated mechanism for growth and loss of surface order

et al. 2007

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“…This value is about 10 % larger than the O-O distance in α-and γ-Al 2 O 3 . A lattice expansion of a similar amount has also been observed in the oxide films grown on the (110) surface of the cubic binary alloy AlNi [44,45]. The limited radial spread of the diffraction spots indicates that the domains are almost as large as the terraces of the quasicrystalline substrate.…”

Section: Oxygen Adsorptionsupporting

confidence: 54%

Bulk and surface structure of the clean and adsorbate-covered decagonal Al–Co–Ni quasicrystal

Burkardt¹,

Deloudi²,

Erbudak³

et al. 2008

J. Phys.: Condens. Matter

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We review our Al adsorption experiments on the tenfold-symmetry surface of the decagonal Al-Co-Ni quasicrystal and present computational simulations of adsorption on a structural model based on a fundamental Al-Co cluster with 20Å diameter, symmetry 102m, and 8Å periodicity. This cluster is the building unit of τ 2 -Al 13 Co 4 , from which, by a sequence of minor changes, the structures of the phases in the stability region of decagonal Al-Co-Ni can be derived. The model used for the decagonal Al 70 Co 15 Ni 15 is an idealized model with a two-layer periodicity (4Å) and no chemical or structural disorder. We find that the bulk and surface properties of this model are in good agreement with experiments. Our molecular-dynamics simulations of Al adsorption reproduce the experimental results and show that by varying the thermal relaxation rates of the adsorbed layer, a variety of different surface morphologies can be achieved. We also present our recent experiments on dissociative adsorption of oxygen on the decagonal surface. PACS numbers:Clean and adsorbate-covered decagonal Al-Co-Ni

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“…The interface orientation of Ni-Al ͑110͒ matching Al 2 O 3 ͑0001͒ has been investigated quite often in experiments. [35][36][37][38][39] However, within those interfacial mismatches, there are a few potential models of the interface with different planar matching or orientation. Traditionally, the model interface for ab initio studies is constructed seeking the configuration with minimum interfacial mismatch, 19,21,[32][33][34]40,41 and usually the material with the smaller modulus is deformed into commensuration with the stiffer material.…”

Section: A Computational Detailsmentioning

confidence: 99%

Ab initiothermodynamic study of the structure and chemical bonding of aβ-Ni1−xAlx/α-Al2<

Feng

Zhang

et al. 2009

Phys. Rev. B

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The properties of an interface between a metallic alloy and an oxide are computed by combining ab initio quantum mechanics with thermodynamics. Results for the stability, structures, and chemical compositions of the ␤-Ni 1−x Al x / ␣-Al 2 O 3 interface are presented. We found that there are two types of stable structures for the interface. Type I is characterized by joining an Al-rich Ni-Al alloy with an Al-rich Al 2 O 3 surface ͑terminated by two Al atomic layers͒. Type II is a junction of a Ni-rich Ni-Al alloy with an Al 2 O 3 surface terminated by an oxygen atomic layer and with atomic migrations and interchanges within the interfacial region. Both types of interfaces exhibit Al accumulation on top of the oxide scale while an adjacent Ni-rich layer is found at the type-II interfaces. The atomic geometries, electronic structures, and chemical bonds of the two types of interfacial systems were analyzed. The calculated interfacial works of separation W sep agree reasonably well with experimental data and earlier calculations.

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Formation of epitaxial Al2O3/NiAl(110) films: aluminium deposition

Cited by 13 publications

References 13 publications

Reactivities of ultrathin alumina films exposed to intermediate pressures of H2O: Substrate-mediated mechanism for growth and loss of surface order

Reactivities of ultrathin alumina films exposed to intermediate pressures of H2O: Substrate-mediated mechanism for growth and loss of surface order

Bulk and surface structure of the clean and adsorbate-covered decagonal Al–Co–Ni quasicrystal

Ab initiothermodynamic study of the structure and chemical bonding of aβ-Ni1−xAlx/α-Al2<

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