Formation of E-band luminescence-active centers in bismuth-doped silica fiber via atomic layer deposition
Weiqi Wang,
Yuanyuan Yang,
Jianxiang Wen
et al.
Abstract:In this study, a Si defect structure was added into the silica network in order to activate the bismuth and silica structure active center. TD-DFT theoretical simulations show that the Bi and Si ODC(I) models can excite the active center of the E-band at 1408 nm. Additionally, the Bi-doped silica fiber (BDSF) with improved fluorescence was fabricated using atomic layer deposition (ALD) combined with the modified chemical vapor deposition (MCVD) technique. Some tests were used to investigate the structural and … Show more
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