Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon

An analytical approach to model manufacturing a drift heterobipolar transistors: On approach to optimize technological process to increase integration rate

“…This changing leads to decreasing of elements integrated circuits [Pankratov and Bulaeva, 2013]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [Stepanenko, 1980;Alexenko and Shagurin, 1990;Gotra, 1991;Avaev et al, 1991;Lachin and Savelov, 2001;Polishscuk, 2004;Volovich, 2006;Kerentsev and Lanin, 2008;Ageev et al, 2009;Tsai et al, 2009;Gol'dman et al, 2011;Peng et al, 2006;Ou-Yang et al, 2010;Wang et al, 2012;Alexandrov et al, 1998;Ermolovich et al, 2009;Sinsermsuksakul et al, 2013;Reynolds et al, 2013]. Another way to increase the performance is elaboration of new technological processes and modification of the existing one.…”

An approach to increase the integration rate of planar drift heterobipolar transistors

“…This change leads to decrease in elements integrated circuits [21]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [1][2][3][4][5][6][7][8][9][10][11][12][13][14][22][23][24][25]. Other ways to increase performance are elaboration of new technological processes and modification of existing ones.…”

An Approach to Increase Integration Rate of Elements of a Cascaded-inverter Circuit

“…They are widely using laser and microwave types of annealing of infused dopants. These types of annealing are also widely using for annealing of radiation defects, generated during ion implantation [9][10][11][12][13][14][15][16][17]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature.…”