Formation of CuInSe2 by the annealing of stacked elemental layers—analysis by in situ high-energy powder diffraction

Brummer, Alexander; Honkimäki, V.; Berwian, Patrick; Probst, V.; Palm, J.; Hock, Rainer

doi:10.1016/s0040-6090(03)00685-0

Cited by 83 publications

(50 citation statements)

References 16 publications

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“…The basic rate equation for constant heating rates is displayed in Eq. (5). Thereby X is the volume fraction transformed [17].…”

Section: Kinetic Analysismentioning

confidence: 99%

“…Thus, the selenides of In are forming prior to those of Ga [7]. (ii) The formation of CIS is finished before CGS starts to form at elevated temperatures of about 400 1C [5,6]. (iii) Berwian [7] found by REM and EDS analysis that Ga accumulates at the back electrode in form of the intermetallic alloy Cu 9 Ga 4 already in an early stage of the selenization process.…”

Section: Introductionmentioning

confidence: 99%

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Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications

Purwins

Weber

Berwian

et al. 2006

Journal of Crystal Growth

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“…The basic rate equation for constant heating rates is displayed in Eq. (5). Thereby X is the volume fraction transformed [17].…”

Section: Kinetic Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications

Purwins

Weber

Berwian

et al. 2006

Journal of Crystal Growth

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“…Cu 0. 8 In precursors contained a Cu layer of 235 nm thickness. Selenization of Cu 1.0 In precursors (294 nm Cu) and Cu 1.4 In precursors (411 nm of Cu) was investigated as well.…”

Section: Methodsmentioning

confidence: 99%

“…It was found that CuInSe 2 crystallizes from the intermediate binary phases Cu 2 Se and InSe within a melt rich in selenium. Recently, Brummer et al [8] investigated the stacked elemental layer process by use of in situ X-ray diffraction experiments using monochromatic synchrotron radiation. It was stated that the phase transformation sequences partly deviate from those expected from the reported phase diagrams due to a lack of chemical equilibrium within the films.…”

Section: Introductionmentioning

confidence: 99%

Real-time studies of phase transformations in Cu–In–Se–S thin films—3: Selenization of Cu–In precursors

Djordjevic¹,

Rudigier²,

Scheer³

2006

Journal of Crystal Growth

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Phase transformations during selenization of thin films of elemental Cu, elemental In, and intermetallic Cu x In with x ¼ (1.8, 1.0, 0.8) are investigated using real-time energy dispersive X-ray diffraction. From the temporal development of the X-ray peak intensities, phase predominance sequence diagrams are constructed including the intensity ratio of the CuK a /InK a fluorescence lines. It was found that vapor selenization of Cu layers results in the formation of Cu 2Àx Se. At elevated temperature, linear growth of Cu 2Àx Se is observed which is interpreted as a surface controlled reaction mechanism. Indium selenization proceeds via the phase sequence In 4 Se 3 -InSe-In 2 Se 3 . During Cu x In selenization, the transformation sequence towards more Cu-rich intermetallic phases CuIn 2 -Cu 11 In 9 and Cu 11 In 9 -Cu 16 In 9 precedes the selenization process. During selenization of precursors with x41.4, this sequence continues bringing up the intermetallic phases Cu 7 In 3 and a-CuIn. The latter are formed at the bottom of the films. Thus, the bottom of the film becomes depleted from Indium by In diffusion. In general, the selenization process is slower than the sulfurization processes investigated in Part 2 of this study. A model is proposed which includes Cu 2Àx Se as a preliminary precursor for CuInSe 2 growth. This Cu 2Àx Se formation at the surface of the films is proposed to be surface reaction limited and is proposed to be the limiting step for the CuInSe 2 formation. Precursors with xp1 transform into CuInSe 2 with the participation of In-Se phases. r

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“…It has an ideal band gap and high absorption coefficient that provide desired electrical and optical properties for solar cells [2]. In addition, CuInSe 2 offers easy and low cost method to produce large area solar cells at usual room temperatures [3]. Several fabrication technologies are existing to manufacture CuInSe 2 solar thin films [4] and different characteristics of the films are also evaluated for the determination of its perfectibility as high conversion efficiency solar cell [5,6].…”

Section: Introductionmentioning

confidence: 99%

Studies on optical characteristics of CuInSe2 thin films

Bhuiyan

Hossain

et al. 2013

Open Engineering

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CuInSe 2 is considered as a striking semiconductor for second generation solar cells. An investigation of optical properties of CuInSe 2 thin films is essential to evaluate its perfectibility as high efficiency solar cells. The films were fabricated by thermal co-evaporation technique. For this experiment, a shimadzu spectrophotometer of model number 1201 is used. The optical properties of these films are determined for the wavelength range 350 nm -1100 nm. From the experiment it is evident that the reflectance and transmittance of the films are negligible in comparison to the absorption of these films. The high absorption coefficient of the order of 104/cm of the film material also supports this. The band gap of the CuInSe 2 films was evaluated to be 1.1 eV. From XRD and EDAX analysis it is evident that CuInSe 2 films are polycrystalline in nature having ideal stoichiometric composition.

show abstract

Formation of CuInSe2 by the annealing of stacked elemental layers—analysis by in situ high-energy powder diffraction

Cited by 83 publications

References 16 publications

Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications

Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications

Real-time studies of phase transformations in Cu–In–Se–S thin films—3: Selenization of Cu–In precursors

Studies on optical characteristics of CuInSe2 thin films

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