Formation of CuInS₂–carbon multilayers in the spray ILGAR process

Abstract

In this paper, the incorporation of carbon into CuInS2 (CIS) thin films is described as observed in spray ion layer gas reaction (ILGAR) deposition of such thin films. It is shown that this carbon incorporation leads to the formation of a CIS–carbon multilayer stack. Its growth mechanism is explained by the interaction of the copper and indium precursor compounds used in the deposition process.

Structural characterization of CuInS2 thin films from Cu–In metal inks

“…Meanwhile, the intensities of carbon modes are much larger than that of the upside CuInS 2 films, indicating more carbon is left behind and enwraps the CuInS 2 grains in the bottom layer. A similar phenomenon in CuInS 2 films prepared by a spray method has been reported 3, 22. However, it is proposed that the bottom layer with small grains seems not necessarily undesirable, as it is far from the actual junction in the solar cell device 17.…”

“…7b. All the peak positions are nearly the same for the two sides, with a A 1 (CH) mode and two carbon modes, which are assigned to the diamond‐ and graphite‐like modes (i.e., D = diamond‐like or disordered and G = graphite‐like) 22. However, the intensity and half width of these peaks differ significantly.…”