Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating method

Ikeda, T.; Kawate, Yoshio; Hirai, Yo

doi:10.1116/1.576602

Cited by 149 publications

(15 citation statements)

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“…On the other hand, a number of studies on BN film growth on metallic substrates using PVD or CVD techniques revealed the development of an alloy layer at the substrate/film interface. 159,160 On that account, the formation of metal nitrides or borides which does not maintain the desired lattice match may hamper heteroepitaxial c-BN film growth on metallic substrates. A few reports have also been presented on the deposition of heteroepitaxial c-BN films on highly oriented wurtzite AlN films.…”

Section: Effect Of Substratesmentioning

confidence: 99%

Review of synthesis and properties of cubic boron nitride (c-BN) thin films

Samantaray¹,

Singh²

2005

International Materials Reviews

122

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Cubic boron nitride (c-BN) thin films are of significant interest because of their diamond like structure and properties. c-BN shows high thermal conductivity, chemical inertness against ferrous metals even at high temperatures, wide band gap, and good transmittance over a wide spectral range from UV to visible. Applications of c-BN include hard protective coatings for cutting tools, in optical instruments as UV detectors, as emitters, and in high temperature electronic devices. However, synthesis of phase pure c-BN thin films continues to be very challenging. The present study reviews the current status of the synthesis, characterisation, mechanical, electrical, and optical properties of c-BN thin films. Both physical and chemical vapour deposition methods used for the preparation of the c-BN films are covered. In addition, different nucleation and growth models of c-BN formation and growth on different substrates are described. The influence of process parameters such as ion energy, growth temperatures, chemical precursors, bias, and impurities on the nucleation and growth is reviewed. Mechanical properties including hardness, elastic modulus, and stiffness of c-BN films are discussed. The latest developments in electrical properties of the c-BN films based on metal-insulatorsemiconductor (MIS) hetero-structures, interface states, impurity states, conduction mechanism, field emission properties, and negative electron affinity (NEA) are presented. The optical properties and cathodoluminescence characteristics of BN films are also discussed.

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Section: Effect Of Substratesmentioning

confidence: 99%

Review of synthesis and properties of cubic boron nitride (c-BN) thin films

Samantaray¹,

Singh²

2005

International Materials Reviews

122

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“…On the other hand, a number of studies on BN film growth on metallic substrates using PVD and CVD techniques revealed the development of an alloy layer at the substrate-film interface. 36,37 On that account, the formation of metal nitrides or borides which do not maintain the desired lattice match may hamper heteroepitaxial c-BN film growth on metallic substrates.…”

Section: Selection Of Appropriate Substrates For Direct Nucleatiomentioning

confidence: 99%

Cubic boron nitride thin film heteroepitaxy

Feldermann

Ronning

Hofsäß

et al. 2001

Journal of Applied Physics

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In this study we investigate the possibility of nucleating nanocrystalline cubic boron nitride (c-BN) thin films directly onto suitable substrates without the soft turbostratic BN (t-BN) interlayer that is usually observed. This would open a path to the epitaxial growth of c-BN films which is essential particularly for practicable applications in electronic devices. Appropriate substrates are required to exhibit a lattice that matches the c-BN crystallite structure, survives the ion bombardment imperative for c-BN film formation, and is not disturbed by the development of a heterogeneous interface layer. In accordance with these criteria, monocrystalline AlN is selected and employed as a potential substrate for direct c-BN film growth using mass selected ion beam deposition. A detailed examination of the BN/AlN interface microstructure by cross-sectional high-resolution transmission electron microscopy reveals that the AlN crystallinity is indeed retained, with no amorphous layer next to the BN film as commonly observed on Si substrates. Nanocrystalline BN grains with the cubic, and, more frequently, with the wurtzitic structure are found in direct contact with certain regions of the rugged AlN substrate, covering about one-third of its entire surface with no mediating t-BN or other interface layer. The c-BN and w-BN growth areas are textured and exhibit definite preferential orientation relationships with the faceted AlN substrate surface. The consequences of these findings for the understanding of the role of the t-BN interlayer in c-BN film nucleation are discussed.

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“…Both n-and p-type dopability of c-BN makes this sample important in the manufacture of electronic devices [1][2][3]. In a recent work [4], c-BN has been reported to be an ideal substrate for the fabrication of high temperature UV and blue light emitting diodes (LEDs) [1,5,6] and laser diodes (LDs) [7].…”

Section: Introductionmentioning

confidence: 99%