Formation of copper(II) oxide nanostructures in porous glass as revealed by electrical conductivity measurements

Formation and electrical conductivity of low-dimensional copper structures in porous glass

“…The formation of an oxide monolayer was concluded, as previously [11,12], from a sharp decrease in resistivity of the CuO-porous glass samples, observed at the "accumulated" oxide amount Q CuO of 1.310 mmol/g (hereinafter, the deposit amount is given per gram of the support). Further increase in the oxide content to above monolayer level (Q CuO 1.618 and 1.946 mmol/g) was accompanied with a slight increase in conductivity which is consistent with the data from [11,12]. Highly illustrative is the ratio of the specific surface area of the porous glass support, 80 m 2 /g, to the amount of the oxide introduced, corresponding to its monolayer 2D-distribution (Q CuO 1.310 mmol/g).…”

“…The CuO-porous glass system samples were synthesized in accordance with the regulations [11,12]. The porous glass plates were impregnated with a copper(II) nitrate solution (c 0.15 M) for 30 min; excess solution was removed from the external surface of the plates with compressed air.…”

“…Sequential "stepwise accumulation" of copper(II) oxide on the walls of the through channels in porous glass membranes involves an increase in size of the planar clusters with 2D-structure in the tangential direction, culminating in the formation of a monolayer structure [11,12]. The 2D structure of smalldimensional metallic copper forms may well be associated with the use of encapsulated 2D-oxides as precursors.…”

“…Copper(II) oxide was synthesized by the "small step" route [11,12] through which its amount in the support could be monotonically increased. The formation of an oxide monolayer was concluded, as previously [11,12], from a sharp decrease in resistivity of the CuO-porous glass samples, observed at the "accumulated" oxide amount Q CuO of 1.310 mmol/g (hereinafter, the deposit amount is given per gram of the support). Further increase in the oxide content to above monolayer level (Q CuO 1.618 and 1.946 mmol/g) was accompanied with a slight increase in conductivity which is consistent with the data from [11,12].…”