Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation

Xiong, Fenfen; Tombrello, T. A.; Chen, T.R.; Wang, H.; Zhuang, Yi; Yariv, Amnon

doi:10.1016/0168-583x(89)90832-x

Cited by 28 publications

(8 citation statements)

References 12 publications

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“…(2) and (10) are solved simultaneously, and after phase transformation, we return back to Eqs. (2) and (3).…”

Section: Unified Thermal Spike Modelmentioning

confidence: 99%

“…There are quite a few reports in the literature, which discussed the structural evolution in InP on swift heavy ion (SHI) irradiation. Formation of highly resistive thick buried layers [2] and tensile strained layers [3] were observed on high energy ion irradiation in InP. Damage and formation of amorphized tracks in InP for swift Xe ions was first reported by Herre et al [4].…”

Section: Introductionmentioning

confidence: 95%

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Swift heavy ion induced structural evolution in InP

Mishra

Hooda

Kabiraj

et al. 2015

Vacuum

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“…(2) and (10) are solved simultaneously, and after phase transformation, we return back to Eqs. (2) and (3).…”

Section: Unified Thermal Spike Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Swift heavy ion induced structural evolution in InP

Mishra

Hooda

Kabiraj

et al. 2015

Vacuum

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“…Ion irradiation is a well‐established technique for tuning various physical, electrical, optical and mechanical properties of these materials. For example, ion irradiation and subsequent annealing can produce modified layers (both on the surface and deep inside the target) with their electrical conductivity different from that of the surrounding matrix . In case of semiconductors, these energetic irradiated ions produce various types of defects, like vacancies and interstitials, along their path.…”

Section: Introductionmentioning

confidence: 99%

Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

Mishra

Singh

Bhattacharya

et al. 2016

J Raman Spectroscopy

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Raman spectroscopy and Hall measurements have been carried out to investigate the differences in near‐surface charge carrier modulation in high energy (~100 MeV) silicon ion (Si8+) and oxygen ion (O7+) irradiated n‐GaAs. In the case of O ion irradiation, the observed decrease in carrier concentration with increase in ion fluence could be explained in the view of charge compensation by possible point defect trap centers, which can form because of elastic collisions of high energy ions with the target nuclei. In Si irradiated n‐GaAs one would expect the carrier compensation to occur at a fluence of 2.5 × 1013 ions/cm2, if the same mechanism of acceptor state formation, as in case of O irradiation, is considered. However, we observe the charge compensation in this system at a fluence of 5 × 1012 ions/cm2. We discuss the role of the complex defect states, which are formed because of the interaction of the primary point defects, in determining carrier concentration in a Si irradiated n‐GaAs wafer. The above results are combined with the reported data from the literature for high energy silver ion irradiated n‐GaAs, in order to illustrate the effect of both electronic and nuclear energy loss on trap creation and charge compensation. Copyright © 2016 John Wiley & Sons, Ltd.

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“…Ion bombardment with light ions-H 2-5 He, 4,6,7 Be, 4 B, 4,5,7 N, 5,8 and O 6,9 -is a very attractive method to obtain interdevice electrical isolation for monolithic integrated circuits 1,10 due to the advantages that these ions provide, in particular, the large penetration depth for low and medium implantation energies as a consequence of their low atomic mass. However, contrary to GaAs, where excellent electrical isolation has been obtained by ion implantation, ion bombardment is not so effective in creating this kind of areas in InP and other In-based compounds.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

Quintanilla

Pinacho

Enríquez

et al. 1999

Journal of Applied Physics

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Articles you may be interested inEffects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN J. Appl. Phys. 97, 073702 (2005); 10.1063/1.1871334 Electrical field effect of H-implantation induced defect states in GaNThe electrical characterization of He-ion implantation-induced deep levels existing in fully implanted p ϩ n InP junctions isolated by He bombardment is reported in this work. An electron trap located at 0.19 eV below the conduction band and a hole trap located at 0.13 eV above the valence band were detected by deep-level transient spectroscopy ͑DLTS͒. Several emission characteristics of these traps were extracted from the correlation between DLTS and the capacitance-voltage transient technique. The experimental determination of trap capture properties was also carried out. In particular, the capture kinetics was found to exhibit a strong temperature dependence for both centers. Two experimental methods-direct recording of capture transients and analysis of DLTS peaks-were used to estimate the capture parameters. Finally, some tentative arguments are proposed in order to correlate the results obtained from the thermal emission and capture measurements.

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Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation

Cited by 28 publications

References 12 publications

Swift heavy ion induced structural evolution in InP

Swift heavy ion induced structural evolution in InP

Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

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