Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers
Fumihiro Fujie,
Tsubasa Shiono,
Koichi Murata
et al.
Abstract:For large-diameter (150 mm) SiC epitaxial wafers with thick n− epilayers, stress analysis based on the finite element method and defect characterization near the epi/sub interface by synchrotron x-ray topography were performed. Observations on epitaxial wafers with epilayer thicknesses of 10, 20, 50, and 100 μm revealed that basal plane dislocation (BPD) half-loops were formed near triangular defects or from the edge of the wafer at an epilayer thickness of 50 μm and above. Two types of BPD half-loops with dif… Show more
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