Formation of an Endothermal Cu₂In₂SiS₆ Compound in the CuInS₂—SiS₂ System.

Abstract

Structure D 2000Formation of an Endothermal Cu2In2SiS6 Compound in the CuInS2-SiS2 System.-The new endothermal quaternary title compound exists in the CuInS 2 -SiS 2 system in the temperature range of 1107-1233 K. Its crystal structure is determined by powder XRD. The compound crystallizes in the monoclinic space group Cc (Ag2In2GeSe6-type structure) with Z = 10. The mechanism of the formation of the solid solution Cu0.91In0.91Si0.09S2 is discussed. It crystallizes in the space group I42d with Z = 4. -(SACHANYUK, V. P.; OLEKSEYUK, I. D.; PARASYUK*, O. V.; J.