We demonstrated control and detection of UV-induced 3-aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.Hetero-interfaces between organic and semiconductor oxides have attracted extensive attentions 1-4 due to the critical role of molecule assembly in the sensing electronics involving hybrid structures. APTES 5 (3-aminopropyltriethoxysilane) and other compounds such as PTS 6 (n-propyltrichlorosilane), OTS 7 (n-octadecyltrichlorosilane), TCTS 8 (n-triacontyltrichlorosilane), OTMS 9 (n-octadecyltrimethoxysilane), and AHT-MS 9 (n-aminoheptadecyltrimethoxysilane) with head-andtail functional groups are widely used interfacing molecules, and assembly of these molecules is essential in surfacemodification technologies. Silanization of oxidized semiconductor surfaces is a commonly employed scheme for functionalization of sensors. The functional groups would then provide binding sites for attachment of probe molecules, such as single-strand DNA (ssDNA), on the semiconductor sensing devices. The nanowire-based sensors have been demonstrated 10-14 as an ultra sensitive detector for probing molecular charges at the wire surface. However, surface modification of the functional groups on the nanowire surface is not a trivial task. Extensive studies in the surfacemodification were reported in the past years, 5-9 but issues concerning monolayer molecule ordering in terms of the electric dipole moment remain unexplored. Taking APTES as an example, in this study, we proposed a simple method to align the molecule dipoles, and the degree of alignment was examined by underneath Si-nanowire (SiNW) field effect transistors. This method provides a sensitive way for structure investigation of few molecules at the nanometer scale, which is otherwise unfeasible by the present-day examination tools. † These authors contributed equally to this work.