2011
DOI: 10.1016/j.tsf.2011.02.047
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Formation of a-Si:H and a-Si1-xCx :H nanowires by Ag-assisted electroless etching in aqueous HF/AgNO3 solution

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Cited by 20 publications
(15 citation statements)
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“…It can be also observed that the nanowires tips sticked together, and the bundles are formed. This is due to van der Waals forces as was suggested previously [29].The diameter of a single nanowire is in the range of 20-100 nm. The crosssection image, displayed in Fig.…”
Section: Methodssupporting
confidence: 73%
“…It can be also observed that the nanowires tips sticked together, and the bundles are formed. This is due to van der Waals forces as was suggested previously [29].The diameter of a single nanowire is in the range of 20-100 nm. The crosssection image, displayed in Fig.…”
Section: Methodssupporting
confidence: 73%
“…The deposited metal atoms first form nuclei and then nanoclusters to give nanoparticles [16,17]. The decoration of SiNWs with Au nanoparticles for 20 min is low as can be observed in Fig.…”
Section: Characterization Of Silicon Nanowiresmentioning
confidence: 94%
“…In the present study, we cultured postnatal day 4 (PN4) mouse retinal cells on Si NW substrates produced using metal assisted chemical etching (MACE), which produces high aspect ratio pores in Si. 25,26 We assessed the cell distribution, morphology, as well as the expression of retinal cell functional markers using immunocytochemistry aer 3 and 18 days in vitro (DIV) on Si NW and used at silicon substrates as controls.…”
Section: Introductionmentioning
confidence: 99%