Formation of a quasi-free-standing graphene with a band gap at the dirac point by Pb atoms intercalation under graphene on Re(0001)

Estyunin, D. A.; Климовских, И. И.; Voroshnin, Vladimir; Sostina, Daria; Petaccia, L.; Santo, Giovanni Di; Shikin, A. M.

doi:10.1134/s1063776117100065

Cited by 14 publications

(16 citation statements)

References 36 publications

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“…These observations are reminiscent of others made with related systems [15,17,18,50,21,22], and suggest that graphene here has a freestanding character. In contrast, ARPES measurements on graphene/Re(0001) in the absence of the Au intercalant suggest strong electron donation from the substrate to graphene and hybridization between the C and Re orbitals (figure S1(d)), consistent with previous reports [15,16].…”

Section: Dirac Cone Of Quasi Free-standing Graphenesupporting

confidence: 89%

“…In contrast, on graphene/Re(0001), Ag [15] and Pb [16] intercalation resulted in n-doping of graphene.…”

Section: Dirac Cone Of Quasi Free-standing Graphenementioning

confidence: 90%

“…Intercalation is however not neutral, and may have desired or spurious effects on graphene, including the possibility to adjust the electronic doping of graphene "from below" [13,23,24,25,17,26,27,15,16] and the possibility to generate defects [28,29,30].…”

Section: Introductionmentioning

confidence: 99%

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How to induce superconductivity in epitaxial graphene $via$ remote proximity effect through an intercalated gold layer

Mazaleyrat,

Vlaic,

Artaud

et al. 2020

Preprint

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Graphene holds promises for exploring exotic superconductivity with Dirac-like fermions. Making graphene a superconductor at large scales is however a long-lasting challenge. A possible solution relies on epitaxially-grown graphene, using a superconducting substrate. Such substrates are scarce, and usually destroy the Dirac character of the electronic band structure. Using electron diffraction (reflection high-energy, and low-energy), scanning tunneling microscopy and spectroscopy, atomic force microscopy, angle-resolved photoemission spectroscopy, Raman spectroscopy, and density functional theory calculations, we introduce a strategy to induce superconductivity in epitaxial graphene via a remote proximity effect, from the rhenium substrate through an intercalated gold layer. Weak graphene-Au interaction, contrasting with the strong undesired graphene-Re interaction, is demonstrated by a reduced graphene corrugation, an increased distance between graphene and the underlying metal, a linear electronic dispersion and a characteristic vibrational signature, both latter features revealing also a slight p doping of graphene. We also reveal that the main shortcoming of the intercalation approach to proximity superconductivity is the creation of a high density of point defects in graphene (10 14 cm −2 ). Finally, we demonstrate remote proximity superconductivity in graphene/Au/Re(0001), at low temperature.

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Section: Dirac Cone Of Quasi Free-standing Graphenesupporting

confidence: 89%

“…In contrast, on graphene/Re(0001), Ag [15] and Pb [16] intercalation resulted in n-doping of graphene.…”

Section: Dirac Cone Of Quasi Free-standing Graphenementioning

confidence: 90%

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How to induce superconductivity in epitaxial graphene $via$ remote proximity effect through an intercalated gold layer

Mazaleyrat,

Vlaic,

Artaud

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…Several experimental papers on Pb intercalation of graphene have been reported [9][10][11][12][13][14][15]. For example, Pb intercalation below graphene on Ir(111) was shown to induce magnetism in graphene because of the large spin-orbit coupling (SOC) [15].…”

Section: Introductionmentioning

confidence: 99%

Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

et al. 2021

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Manipulating the electronic properties of graphene has been a subject of great interest since it can aid material design to extend the applications of graphene to many different areas. In this paper, we systematically investigate the effect of lead (Pb) intercalation on the structural and electronic properties of epitaxial graphene on the SiC(0001) substrate. We show that the band structure of Pb-intercalated fewlayer graphene can be effectively tuned through changing intercalation conditions, such as coverage, location of Pb, and the initial number of graphene layers. Lead intercalation at the interface between the buffer layer (BL) and the SiC substrate decouples the BL from the substrate and transforms the BL into a p-doped graphene layer. We also show that Pb atoms tend to donate electrons to neighboring layers, leading to an n-doping graphene layer and a small gap in the Dirac cone under a sufficiently high Pb coverage. This paper provides useful guidance for manipulating the electronic properties of graphene layers on the SiC substrate.

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“…A BOP potential has in fact been carefully parametrized for the Ru-C system against the results of DFT calculations, and it was found to satisfyingly reproduce the structural parameters of the nanorippled graphene/Ru(0001) moiré [39]. Interestingly, (0001)-terminated Ru and Re have strong electronic similarities, with in both cases d bands in the 2-4 eV range below the Fermi level [65,66,67]. This is possibly a reason why sp 2hybridized carbon behaves very similarly on Ru(0001) and Re(0001): on both surfaces, similar small sizeselective polycyclic clusters tend to form [68,69,70] and graphene is nanorippled with almost identical minimum and maximum graphene-metal distances [9,31,27,71].…”

Section: Nanometer-scale Stacking Faultsmentioning

confidence: 99%

Depressions by stacking faults in nanorippled graphene on metals

Artaud¹,

Mazaleyrat²,

Förster³

et al. 2020

2D Mater.

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A broad variety of defects has been observed in two-dimensional materials. Many of these defects can be created by top-down methods such as electron irradiation or chemical etching, while a few of them are created along bottomup processes, in particular during the growth of the material, in which case avoiding their formation can be challenging. This occurs e.g. with dislocations, Stone-Wales defects, or atomic vacancies in graphene. Here we address a defect that has been observed repeatedly since 2007 in epitaxial graphene on metal surfaces like Ru(0001) and Re(0001), but whose nature has remained elusive thus far. This defect has the appearance of a vacant hill in the periodically nanorippled topography of graphene, which comes together with a moiré pattern. Based on atomistic simulations and scanning tunneling microscopy/spectroscopy measurements, we argue that such defects are topological in nature and that their core is a stacking fault patch, either in graphene, surrounded by loops of non-hexagonal carbon rings, or in the underlying metal. We discuss the possible origin of these defects in relation with recent reports of metastable polycyclic carbon molecules forming upon graphene growth. Like other defects, the vacant hills may be considered as deleterious in the perspective of producing high quality graphene. However, provided they can be organized in graphene, they might allow novel optical, spin, or electronic properties to be engineered.

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Formation of a quasi-free-standing graphene with a band gap at the dirac point by Pb atoms intercalation under graphene on Re(0001)

Cited by 14 publications

References 36 publications

How to induce superconductivity in epitaxial graphene $via$ remote proximity effect through an intercalated gold layer

How to induce superconductivity in epitaxial graphene $via$ remote proximity effect through an intercalated gold layer

Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Depressions by stacking faults in nanorippled graphene on metals

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