Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

Yang, C. S.; Wang, J. S.; Lai, Yung-Yu; Luo, Chih-Wei; Chen, D. S.; Shih, Yu-Tai; Chou, Wu–Ching

doi:10.1088/0957-4484/18/38/385602

Cited by 9 publications

(3 citation statements)

References 18 publications

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“…This has precluded spectroscopy of individual QDs in such mixed type systems so far. 2,3,[29][30][31][32][33][34] Cd(Se,Te)/ZnSe QDs presented in this letter are grown by molecular beam epitaxy on a 1 µm thick ZnSe buffer deposited on a GaAs substrate. They form in a self-assembled mode out of atomic layers of Se, Cd, Te, Cd, and Se (each one for time of 15 sec) consecutively deposited at temperature of the substrate set to 335 • C. An approximately monolayer thick CdSe layer (a CdSe = 0.608 nm) inserted between CdTe layer and ZnSe diminishes the strain resulting from the CdTe and the ZnSe lattice mismatch.…”

Section: Cd(sete)/znse Quantum Dots Produced By a Mn-assisted Epitaxi...mentioning

confidence: 99%

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

et al. 2016

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Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mnassisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV ≤ ∆EX−XX ≤ 26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright exciton, and additionally the exciton fine structure splitting δ1 and Landé factor. Above results indicate that values of the δ1 and of the Landé factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wavefunctions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe and CdTe rich QD regions.

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Section: Cd(sete)/znse Quantum Dots Produced By a Mn-assisted Epitaxi...mentioning

confidence: 99%

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

et al. 2016

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“…Advances in the growth technology of II-VI semiconductors now permit the growing of high-quality ZnCdTe/ZnTe QDs. 6,7) On the theoretical side, it has recently been reported that the strain significantly affects the energy band structures of the strained CdTe/ZnTe QD system. 8) However, many fundamental electronic and optical properties of this system are not yet well understood.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Strained CdTe/ZnTe Pyramidal Quantum Dots

Park

Hong

2010

Jpn. J. Appl. Phys.

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A brief review of established methods shows that only with the Berthelot technique is it possible to see a finite volume of liquid in sustained mechanical tension. A short discussion of the practice and theory reveals two uncertainties with the conventional technique : that of the determination of a true filling temperature, and the influence of compliance by the glass on the tension developed. A description is then given of a modified apparatus with which these difficulties do not arise. The tube is formed into a coil which deflects sufficiently to indicate internal pressure or tension, and by monitoring these deflections with a distance meter a record of pressure/ tension against temperature can be made. The course of a typical run is shown from which the excess pressure, filling temperature and limiting tension may all be estimated with much greater precision than befoie. The orders of magnitude of the results obtained are indicated, and a possible influence of non-uniform gaseous supersaturation is suggested.

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“…Advances in a growth technology of II-VI semiconductors now permit the growing of high-quality CdTe/ZnTe QDs. [3,4] Recently, several groups have studied the wetting layer effect on electronic and optical properties of QDs. For example, Lee et al [5] showed that for a selfassembled InAs/GaAs lens-shaped QD, the inclusion of a wetting layer weakens the strain inside the dot by 1%, while it reduces the transition energy between a confined electron and hole level by as much as 10%.…”

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Wetting Layer Effect on Optical Gain of Strained CdTe/ZnTe Pyramidal Quantum Dots

Park¹,

Hong²

2010

Chinese Phys. Lett.

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The optical properties of strained CdTe/ZnTe pyramidal quantum dots (QDs) are investigated as a function of the wetting layer thickness using an eight-band strain-dependent k•p Hamiltonian. The ground-state subband energies in the conduction and valence bands rapidly decreases with the increasing wetting layer thickness. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effect. The optical gain peak on the shorter wavelength side decreases with the increasing wetting layer thickness. On the other hand, the gain peak on the longer wavelength side is nearly independent of the wetting layer thickness. The decrease in the gain peak on the shorter wavelength side is related to the decrease in matrix elements corresponding to transitions between higher subbands such as (3, 4) and (4, 3).

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Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

Cited by 9 publications

References 18 publications

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

Optical Properties of Strained CdTe/ZnTe Pyramidal Quantum Dots

Wetting Layer Effect on Optical Gain of Strained CdTe/ZnTe Pyramidal Quantum Dots

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