2005
DOI: 10.1016/j.apsusc.2004.05.239
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Formation of a metal/epoxy resin interface

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Cited by 31 publications
(47 citation statements)
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“…Under Ar, S a and S q do not exceed 1.5 nm, except for sample SiO Si /epoxy Argon , for which these two values are 4.9 nm and 6.8 nm, respectively. The latter is not acceptable for the AFM observation of metallic nanoislands or clusters that we target, in the range of 1-20 nm in diameter [18]. In order to transfer atomic flatness to the molds, and then to the SiO Si /epoxy surfaces, we mold silicone molds against Si wafer or against PS.…”
Section: Resultsmentioning
confidence: 99%
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“…Under Ar, S a and S q do not exceed 1.5 nm, except for sample SiO Si /epoxy Argon , for which these two values are 4.9 nm and 6.8 nm, respectively. The latter is not acceptable for the AFM observation of metallic nanoislands or clusters that we target, in the range of 1-20 nm in diameter [18]. In order to transfer atomic flatness to the molds, and then to the SiO Si /epoxy surfaces, we mold silicone molds against Si wafer or against PS.…”
Section: Resultsmentioning
confidence: 99%
“…It is shown that samples synthesized in an Ar glove box show a lower surface roughness than those prepared in ambient conditions, and that they are homogeneous in composition. Kansow et al [18] use a similar method with the aim of characterizing the formation of Al, Cu, Ag, and Au films by physical vapour deposition. DGEBA reacts with diethylene triamine in low excess at 55 • C under controlled atmosphere, before it is left for 48 h at ambient temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…Although literatures had given plenty results from experiments, atomic simulation (especially molecular dynamics simulation) or ab initio calculation, focusing on the atomic structure and melting behaviors of perfect aluminum surfaces [1][2][3][4][5][6]22], there appears to be little published data for nonperfect surface melting and their local lattice structure. In this paper, we used classical molecular dynamics simulation with embedded atom method potential to study the details of surface structure and premelting of Al nonperfect (111) surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…For many research fields and technological applications (catalysis, cluster deposition [5], microelectronics [6]), atomic distribution on metal (for example, aluminum) surfaces (including its nanoclusters' surface) play a fundamental role, where their surface structures and melting behaviors are of primary importance.…”
Section: Introductionmentioning
confidence: 99%