Formation of a Buried Soft Layer in Sic for ”Compliant Substrate” by Ion Implantation

Abstract

Radiation damage and its removal have been studied in ion implanted GH-S@bpR%der-ford backscattering/Channeling (RBS). We have implanted Ga and Ti at 800°C using doses of 1 x loL6 to 2 x 1017 cm-2. The implanted samples have been subsequently annealed at 1050"C, and then at 1400°C for 30 sec to study the removal of damage produced during implantation. The energies of implanted species have been chosen to obtain 20 -40 nm projected ranges to form a buried metallic or graphitic layer. No significant damage removal has been observed after 1050°C anneal. however 1400°C annealing of 40 and 120 keV G a implanted samples (fluence 2x 10l6 cm-') resulted in significantly less damage as can be observed from RBS/Channeling data. In the case of Ti implanted samples annealing led to an appreciable increase in the channeled backscattering yield, which might be due to the formation of some new phase (e.g. TiSi or TiSis) and may be related to distortions of the existing lattice.