Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method

Asuha,; Im, Seong-kyun; Tanaka, Masato; Imai, Shigeki; Takahashi, Masatoshi; Kobayashi, Hikaru

doi:10.1016/j.susc.2006.04.015

Cited by 47 publications

(23 citation statements)

References 23 publications

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“…Research on understanding and enhancing the properties of ultra-thin RTO oxide-nanolayers was mainly driven by the MOS transistor and microelectronics technology. Low-temperature substitutes to the RTO process, such as plasma oxidation [20][21][22][23][24], or wet chemical oxidation [25,26] were also investigated. Varying results regarding the growth kinetics and the properties of plasma oxide-nanolayers were observed, showing a strong dependence on the type of PECVD reactor used [24].…”

Section: Introductionmentioning

confidence: 99%

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad

Vossing

Balamou

et al. 2015

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad

Vossing

Balamou

et al. 2015

Applied Surface Science

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“…This is also true after the post-oxidation annealing (POA) [5,6], particularly after post-metallization annealing (PMA) at 250°C in pure H 2 , where the leakage current density of very thin NAOS SiO 2 layers (∼10nm) becomes as low as that for thermal oxide [5,[7][8][9]. The hydrogen namely passivates silicon dangling bonds at the Si-SiO 2 interface in MOS structures, thereby reducing the interface trap density.…”

Section: Introductionmentioning

confidence: 99%

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

et al. 2010

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Abstract:A set of MOS structures with thin SiO 2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U − V G curves). By comparing the A-DLTS spectra, U − V G characteristics and some electrical measurements (G − V , I − V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

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“…A low temperature oxidation method using HNO 3 , applicable to Si [6][7][8][9][10][11] and SiC devices [12][13][14][15], has been developed by us. Immersion of Si wafers in azeotropic HNO 3 (i.e., 68wt% HNO 3 aqueous solutions at 120°C) forms an ultrathin (1.2∼1.4 nm) SiO 2 layer with a leakage current density lower than those of thermally grown SiO 2 with the same thickness [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Si oxidation by use of 98wt% HNO 3 aqueous solutions can produce an ultrathin SiO 2 layer with a lower leakage current density, i.e., lower than that of a silicon oxynitride layer with the same equivalent oxide thickness [9]. By use of the two-step nitric acid oxidation method (i.e., immersion in ∼40wt% HNO 3 aqueous solutions followed by that in 68wt% HNO 3 ), a thick (> 10 nm) SiO 2 layer with good electrical characteristics can be formed [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

et al. 2010

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Abstract:A thick Al 2 O 3 /aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO 3 ) aqueous solutions at room temperature. Measurements of the Al 2 O 3 thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO 3 solutions, respectively. Observation of transmission electron micrographs shows that the Al 2 O 3 layer formed with 68wt% HNO 3 has a structure with cylindrically shaped pores vertically aligned from the Al 2 O 3 surface to the Al 2 O 3 /Al interface. Due to the porous structure, diffusion of HNO 3 proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al 2 O 3 /Al structure is considerably rough. The Al 2 O 3 layer formed with 98wt% HNO 3 solutions, on the other hand, possesses a denser structure without pores, and the Al 2 O 3 /Al interface is much smoother, but the thickness of the Al 2 O 3 layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al 2 O 3 thickness, the leakage current density flowing through the Al 2 O 3 layer formed with 68wt% HNO 3 is lower than that formed with 98wt% HNO 3 . PACS

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Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method

Cited by 47 publications

References 23 publications

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

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