Formation mechanisms of voids and pin-holes in CuSbS<sub>2</sub> thin film synthesized by sulfurizing a co-sputtered Cu–Sb precursor

Huang, Jialiang; Zhang, Pengfei; Cong, Jialin; Li, Jianjun; Hao, Xiaojing

doi:10.1039/d2ta00208f

Cited by 5 publications

(2 citation statements)

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“…As shown in figure 5(i), the optical bandgap of films decreased with the increasing temperature, and optical bandgaps were 2.5 eV (250 °C), 2.19 eV (300 °C), and 1.77 eV (350 °C), respectively. The difference in bandgap between the measured values and the published values [41,[48][49][50] is due to the fact that pure Cu 3 SbS 4 films were not obtained at 350 °C during the experiments. As shown in figure 2(d), the diffraction peak of the (102) CuS film is still present at 350 °C, indicating that the Cu 3 SbS 4 phase is gradually formed from the impurity phase (Cu 2−x S, Sb x S) at 250 °C-350 °C.…”

Section: Cu 3dmentioning

confidence: 69%

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu₃SbS₄ thin films

Feng

Liu

2023

Phys. Scr.

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Chemical vapor reaction is a simple and efficient experimental means of preparing metal sulphide films. Through systematically studying the effect of vulcanisation temperature on the growth of copper sulfide (CuS) thin film. The copper antimony sulfide (Cu3SbS4) thin film was obtained by further vulcanized Sb/Cu mental film. The structure and optical properties of the as-prepared films were characterized by X-ray diffraction, Raman and photoluminescence spectra. The hexagonal structure of CuS film was confirmed and Cu3SbS4 grew preferentially along the (112) crystal plane. The surface grains of CuS and Cu3SbS4 films were finally condensed into spheres. The content of S and the resistance of the films increase with the increase in temperature, but the bandgap of the films will be decreased. The bandgap of Cu2-xS films prepared at 195℃-350℃ is in the range of 2.2-2.5 eV and that of Cu3SbS4 thin films prepared at 350℃ is 1.77 eV, and has good absorption in the visible light range. In addition, The Hall effect measurement indicated CuS and Cu3SbS4 films have p-type semiconducting behavior. The carrier concentration and mobility are 2.45×1021 cm-3 and 1.28 cm2/Vs for CuS, and 4.30×1017 cm-3 and 185.93 cm2/Vs for Cu3SbS4, respectively. The I-T tests show that the CuS and Cu3SbS4 thin films have photoconductive properties.

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Section: Cu 3dmentioning

confidence: 69%

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu₃SbS₄ thin films

Feng

Liu

2023

Phys. Scr.

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“…In addition, PV devices that use CuSbS 2 thin films as absorbent layers have serious problems, such as poor repeatability and relatively low efficiency values (3.22%). 7,26,27 In these studies, it has been estimated that the CuSbS 2 phase has an indirect band gap with a low gap mobility, indicating that it is unlikely to achieve the desired transport properties for use in photovoltaic applications. Subsequent studies have shown that Sb rich samples of this material can lead to the desired stoichiometry and an improved performance in photovoltaic cells.…”

Section: Introductionmentioning

confidence: 99%

The effect of boron doping on the optical, morphological and structural properties of Cu₃SbS₃thin films preparedviaspin coating

et al. 2023

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Additive‐Assisted Hydrothermal Growth Enabling Defect Passivation and Void Remedy in Antimony Selenosulfide Solar Cells

Ji,

Wang,

Hwang

et al. 2024

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Antimony selenosulfide (Sb2(S,Se)3) has recently emerged as a promising light‐absorbing material, attributed to its tunable photovoltaic properties, low toxicity, and robust environmental stability. However, despite these advantages, the current record efficiency for Sb2(S,Se)3 solar cells significantly lags behind their Shockley–Queisser limit, especially when compared to other well‐established chalcogenide‐based thin‐film solar cells, such as CdTe and Cu(In,Ga)Se2. This underperformance primarily arises from the formation of unfavorable defects, predominately located at deep energy levels, which act as recombination centers, thereby limiting the potential for performance enhancement in Sb2(S,Se)3 solar cells. Specifically, deep‐level defects, such as sulfur vacancy (VS), have a lower formation energy, leading to severe non‐radiative recombination and compromising device performance. To address this challenge, thioacetamide (TA), a sulfur‐containing additive is introduced, into the precursor solution for the hydrothermal deposition of Sb2(S,Se)3. This results indicate that the incorporation of TA helps in passivating deep‐level defects such as sulfur vacancies and in suppressing the formation of large voids within the Sb2(S,Se)3 absorber. Consequently, Sb2(S,Se)3 solar cells, with reduced carrier recombination and improved film quality, achieved a power conversion efficiency of 9.04%, with notable improvements in open‐circuit voltage and fill factor. This work provides deeper insights into the passivation of deep‐level donor‐like VS defects through the incorporation of a sulfur‐containing additive, highlighting pathways to enhance the photovoltaic performance of Sb2(S,Se)3 solar cells.

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Formation mechanisms of voids and pin-holes in CuSbS₂ thin film synthesized by sulfurizing a co-sputtered Cu–Sb precursor

Abstract: Chalcostibite CuSbS2 is a promising alternative absorber material for thin film solar cells but the poor photovoltaic devices performance limits its wide application. In this work, one of the main...

Cited by 5 publications

References 23 publications

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu₃SbS₄ thin films

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu₃SbS₄ thin films

The effect of boron doping on the optical, morphological and structural properties of Cu₃SbS₃thin films preparedviaspin coating

Additive‐Assisted Hydrothermal Growth Enabling Defect Passivation and Void Remedy in Antimony Selenosulfide Solar Cells

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Formation mechanisms of voids and pin-holes in CuSbS2 thin film synthesized by sulfurizing a co-sputtered Cu–Sb precursor

Abstract: Chalcostibite CuSbS2 is a promising alternative absorber material for thin film solar cells but the poor photovoltaic devices performance limits its wide application. In this work, one of the main...

Cited by 5 publications

References 23 publications

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu3SbS4 thin films

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu3SbS4 thin films

The effect of boron doping on the optical, morphological and structural properties of Cu3SbS3thin films preparedviaspin coating

Additive‐Assisted Hydrothermal Growth Enabling Defect Passivation and Void Remedy in Antimony Selenosulfide Solar Cells

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Product

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Formation mechanisms of voids and pin-holes in CuSbS₂ thin film synthesized by sulfurizing a co-sputtered Cu–Sb precursor

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu₃SbS₄ thin films

Chemical vapor reaction synthesis and photoelectronic properties of CuS and Cu₃SbS₄ thin films

The effect of boron doping on the optical, morphological and structural properties of Cu₃SbS₃thin films preparedviaspin coating