Formation mechanism of Si(100) surface morphology in alkaline fluoride solutions

Chu, Qingmei; Liu, Xiang; Zhang, Pengxiang; Dai, Yongnian

doi:10.1016/j.apsusc.2011.06.044

Cited by 2 publications

(1 citation statement)

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“…To understand the corrosion mechanism during the acid leaching process, it is important to detect how the chemical state of silicon surface changes in the process. Surface Raman spectroscopy has some advantages in monitoring the surface bonding and has been used in investigating the silicon surface bonds successfully in the cleaning and texturing process for manufacturing solar cells or large-scale integrated circuits. − Therefore, in this case, Raman spectroscopy was used to detect the changes in silicon surface bonds before and after acid leaching, and the results are presented in Figure .…”

Section: Results and Discussionmentioning

confidence: 99%

Hydrometallurgical Purification of Metallurgical Grade Silicon with Hydrogen Peroxide in Hydrofluoric Acid

Lai

Huang

Xiong

et al. 2016

Ind. Eng. Chem. Res.

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The effect of adding hydrogen peroxide (H2O2) as an oxidizing agent on purifying metallurgical grade silicon (MG-Si) by leaching with hydrofluoric acid (HF) was studied as a function of leaching temperature, particle size, leaching duration, and concentration of leaching agents. It was found that the extraction capacity for metallic impurities could be significantly enhanced with introduction of H2O2 into HF lixiviant with little dependence on HF concentration. Upon leaching with 1 mol·L–1 HF and 2 mol·L–1 H2O2 for only 0.25 h at 55 °C, the MG-Si purity could be upgraded from 99.74% to 99.96%, to 99.99% with further prolonging of leaching duration. The sensitivity sequences of precipitates to each etchant were obtained through revealing the microstructural evolution of MG-Si before and after etching. With the help of Raman spectrometry and transmission electron microscopy, the chemical etching mechanism is discussed.

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