1995
DOI: 10.1143/jjap.34.5550
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Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films

Abstract: A model of the formation of a p-type surface conductive layer on deposited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion ( H3O+) which reacts with hydrogen on diamond films and causes the creation of holes in diamond films. The model also explains the disappearance of the p-type surface conductive layer by the action of alkaline substances. The experimental results concerning the change in electrical resistance at the surface of diamond films can be exp… Show more

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Cited by 151 publications
(58 citation statements)
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“…Although the development is still at a very early stage, these properties together with recent advances in chemical vapour deposition (CVD) diamond growth has enabled the demonstration of some devices with promising future prospects, e.g. : high voltage 1 and high temperature 2 diodes, x-ray sensors 3 transfer-doped 4,5 and delta-doped 6 field effect transistors. The utilization of spin states in diamond defects for quantum computing 7 and magnetic field sensors 8 are also topics that have recently attracted strong attention.…”
Section: Introductionmentioning
confidence: 99%
“…Although the development is still at a very early stage, these properties together with recent advances in chemical vapour deposition (CVD) diamond growth has enabled the demonstration of some devices with promising future prospects, e.g. : high voltage 1 and high temperature 2 diodes, x-ray sensors 3 transfer-doped 4,5 and delta-doped 6 field effect transistors. The utilization of spin states in diamond defects for quantum computing 7 and magnetic field sensors 8 are also topics that have recently attracted strong attention.…”
Section: Introductionmentioning
confidence: 99%
“…It is thought that holes are created in the near-surface region by electron out diffusion into adsorbates in a water, or similar, layer at the diamond surface. 10,21,22 These holes are also confined to the near surface by the negative charge at the carbon atom in the dipole. As the diamond is cooled, the holes have less thermal energy and hence become increasingly confined at the surface by the dipole.…”
Section: Discussionmentioning
confidence: 99%
“…3,4 High performance devices have been fabricated utilizing this surface conductive layer; [5][6][7][8][9] however its origin is still under debate. [10][11][12][13] As it is not a dopant in the conventional sense, control over the carrier transport values to date has been elusive. Moderate success has been achieved by moderate annealing treatments in air to partially oxidize the surface, but this also increases the sheet resistivity which is obviously undesirable for device applications.…”
Section: Introductionmentioning
confidence: 99%
“…32 In earlier studies, undoped diamond films of perfect crystallinity were used, and the conductivity of those films was assigned to unknown structural defects caused by the temperature during film deposition. 33, 34 Gi et al 35 observed a decrease in the resistance of diamond while it was in contact with acid or in water vapor and ascribed this drop in resistance to the formation of a conducting surface film covered with hydrogen atoms. This p-type conductivity is characterized by a high carrier density.…”
Section: B832mentioning
confidence: 99%