“…For the inversion domain in GaN structures, they have opposite growth polarities compared with that of the basic matrix of GaN. , Regarding the influence of Mg doping on the GaN film structure, a few groups reported that the Mg incorporation induced a change of polarity from the (0001) of the Ga-terminated face to the (000–1) direction of the N-terminated face in the GaN hexagonal layer. ,, Shown in Figure d are the HR-TEM images that show the changes in the positions of Ga and N that occur in the inversion domains of the p-doping GaN structure. It noticed that the a -axis distance of the inversion domain was ∼1.5% smaller than the GaN structure, and this formation was attributed to in-plane misorientation at the inversion domain compared with the GaN structure region. , Moreover, this further confirmed that the formation characteristics of the inversion domain at the p-GaN structure are strongly correlated with the structural defects existing at the GaN/p-GaN interface. , …”