2008
DOI: 10.3938/jkps.53.3399
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Formation Characteristics of Inversion Domains in P-GaN and P-AlGaN Layers By Using TEM Observation

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Cited by 2 publications
(3 citation statements)
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“…It noticed that the a-axis distance of the inversion domain was ∼1.5% smaller than the GaN structure, and this formation was attributed to in-plane misorientation at the inversion domain compared with the GaN structure region. 34,35 Moreover, this further confirmed that the formation characteristics of the inversion domain at the p-GaN structure are strongly correlated with the structural defects existing at the GaN/p-GaN interface. 31,35 The underlying mechanism is related to the diffusiondependent incorporation of Mg atoms at the surface of the substrate and the growth front of the nanowire top.…”
supporting
confidence: 62%
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“…It noticed that the a-axis distance of the inversion domain was ∼1.5% smaller than the GaN structure, and this formation was attributed to in-plane misorientation at the inversion domain compared with the GaN structure region. 34,35 Moreover, this further confirmed that the formation characteristics of the inversion domain at the p-GaN structure are strongly correlated with the structural defects existing at the GaN/p-GaN interface. 31,35 The underlying mechanism is related to the diffusiondependent incorporation of Mg atoms at the surface of the substrate and the growth front of the nanowire top.…”
supporting
confidence: 62%
“…For the inversion domain in GaN structures, they have opposite growth polarities compared with that of the basic matrix of GaN. , Regarding the influence of Mg doping on the GaN film structure, a few groups reported that the Mg incorporation induced a change of polarity from the (0001) of the Ga-terminated face to the (000–1) direction of the N-terminated face in the GaN hexagonal layer. ,, Shown in Figure d are the HR-TEM images that show the changes in the positions of Ga and N that occur in the inversion domains of the p-doping GaN structure. It noticed that the a -axis distance of the inversion domain was ∼1.5% smaller than the GaN structure, and this formation was attributed to in-plane misorientation at the inversion domain compared with the GaN structure region. , Moreover, this further confirmed that the formation characteristics of the inversion domain at the p-GaN structure are strongly correlated with the structural defects existing at the GaN/p-GaN interface. , …”
Section: Results and Discussionmentioning
confidence: 71%
“…Strain mapping is defined as a numerical image processing technique that measures the local shifts of an image around a crystal defect. The y-axis in the figure shows the quantity (%) of lattice distortions, which is shown as red and blue colors indicating the local strain and density of lattice distortions formed at these regions, respectively [13]. Fig.…”
Section: Sapphirementioning
confidence: 99%