The
demand for different materials in the field of semiconductors has
been driving a strong research during the past decades. Few unique
materials have been developed, and with additional modifications like
crystal doping, it is now possible to achieve many of the desired
material properties with atomic scale precision. An important roadblock
for the scientific community lies in the fact that many of the materials
being considered as channel replacements for silicon, like GaAs, indeed
have well-characterized and likely tunable electronic properties.
On the other hand, such compounds are not suitable for mass production
because they would represent both an increase in the demand of environmentally
critical resources and safety concerns due to their toxic nature.
In this work, we report the synthesis of three different silicates
using a wet chemical approach, with a strict limitation to nontoxic
and environmentally friendly resources. The atomic and electronic
structure of the obtained oxides are characterized by X-ray diffraction
(XRD), infrared spectroscopy (IR), and diffuse reflection ultraviolet–visible
spectroscopy (UV/vis) and subsequently examined by means of first-principles
calculations. Finally, we not only discuss possible limitations of
the synthesized compounds but also anticipate further expansions of
our approach to finally present the most likely fields of application.