Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor

Nieminen, Minna; Putkonen, Matti; Niinistö, Lauri

doi:10.1016/s0169-4332(01)00149-0

Cited by 205 publications

(149 citation statements)

References 31 publications

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“…7 and 41͒ or for O 3 -based growths. 10 Therefore, how the different crystalline structures are generated should be discussed also referring to the key role played by the La source in determining either the reactivity of the ALD process or the C and H impurities content in the film. 61 The presence of La͑OH͒ 3 and/or c-La 2 O 3 in the as-grown film affects and conditions the development of the hexagonal La 2 O 3 polymorph during the postdeposition annealing.…”

Section: A Ald Precursorsmentioning

confidence: 99%

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O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Lamagna

Wiemer

Perego

et al. 2010

Journal of Applied Physics

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The hexagonal phase of La2O3 is obtained upon vacuum annealing of hydroxilated La2O3 films grown with atomic layer deposition at 200 °C using La(PirCp)3 and O3. A dielectric constant value of 24±2 and 22±1 is obtained on Si-based and Ge-based metal-oxide-semiconductor capacitors, respectively. However, the relatively good La2O3 dielectric properties are associated with significant interface reactivity on both semiconductor substrates. This leads to the identification of a minimum critical thickness that limits the scaling down of the equivalent oxide thickness of the stack. These findings are explained by the spontaneous formation of lanthanum silicate and germanate species which takes place during the growth and also upon annealing. Although the ultimate film thickness scalability remains an unsolved concern, the use of an O3-based process is demonstrated to be a suitable solution to fabricate La2O3 films that can be successfully converted into the high-k hexagonal phase.

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Section: A Ald Precursorsmentioning

confidence: 99%

“…44 In fact, La͑ i PrCp͒ 3 has been previously utilized in combination with H 2 O for the ALD growth of La 2 O 3 / Si stacks. 45 Recently, ALD growth by using La͑ i PrfAMD͒ 3 +O 2 has also been reported 30 10,15,40,43 and La x Zr 1−x O 2−␦ ͑Ref. 49͔͒ and Ge substrates ͓e.g., HfO 2 and ZrO 2 ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Lamagna

Wiemer

Perego

et al. 2010

Journal of Applied Physics

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“…This can be easily done due to the fact that we can use the same La(C 11 H 19 O 2 ) 3 precursor used in the growth of the quaternary perovskite films, combined with O 3 to form the La 2 O 3 films [19]. Alternatively, we will investigate the layers obtained from the La(C 5 H 5 ) 3 precursor combined with O 3 , in order to grow the La 2 O 3 tunnel barrier [20].…”

Section: Full Oxide Approach By Ald To Grow Mtjmentioning

confidence: 99%

Atomic Layer Deposition of Magnetic Thin Films

Mantovan¹,

Georgieva²,

Perego³

et al. 2007

Acta Phys. Pol. A

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We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic layer deposition. Our strategy follows two main schemes. The first is a hybrid process where the ferromagnetic layers are produced by chemical vapour deposition and the tunnel oxide is deposited by atomic layer deposition. As ferromagnetic electrodes we use Co and Fe3O4, while MgO, Al2O3, and HfO2 are employed as tunnel oxides. The second and most intriguing scheme is a full-oxide approach in which the ferromagnetic layers and the tunnel barrier layer are all oxides grown by atomic layer deposition. As ferromagnetic layers we focused on the growth of complex manganites (La 0.7 Sr 0.3 MnO 3 ) while as a tunnel oxide we propose La2O3. Film composition has been studied with time of flight secondary ion mass spectroscopy and Rutherford backscattering spectrometry. X-ray diffraction, X-ray reflectivity, and Fourier transform infrared spectroscopy have been used to investigate the structure and morphology of the layers. The magnetic properties of the films are measured by superconducting quantum interference device magnetometer.

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“…Lanthanum oxide thin films have been prepared by chemical vaporization, spray pyrolysis, atomic layer epitaxy, and dual plasma deposition [7][8][9][10]. Lanthanum oxide and lanthanum oxycarbonate can be prepared by a thermal decomposition [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Lanthanum Oxide and Lanthanum Oxycarbonate Layers on Titanium by Electrodeposition with Organic Solution

Choi

Chung

2016

Journal of Nanomaterials

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Layers of lanthanum oxide and lanthanum oxycarbonate were prepared on titanium by electrodeposition with organic solution. Four voltages ranging from 200 to 1000 V were applied for the electrodeposition at three concentrations of lanthanum ions. The organic solution was isobutanol and titanium foils were used as anodes and cathodes. Currents were monitored during the electrodeposition. Deposition layers were calcined at 700 K for 30 min or at 900 K for 60 and 200 min. The morphology and composition of the deposition layers were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Xray photoelectron spectroscopy (XPS). Calcined deposition layers were assayed to be lanthanum oxycarbonate and lanthanum oxide. The average crystallite size was in the vicinity of 8 nm. Sizes of lanthanum oxycarbonate agglomerates in layers with 30 min electrodeposition and calcination at 700 K were ranging from 25 to 75 nm. Yields of lanthanum oxycarbonate at three concentrations of lanthanum ions were shown to be better at 400 V.

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Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor

Cited by 205 publications

References 31 publications

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Atomic Layer Deposition of Magnetic Thin Films

Preparation of Lanthanum Oxide and Lanthanum Oxycarbonate Layers on Titanium by Electrodeposition with Organic Solution

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