Formation and Removal of Tungsten Flake and Metallic Film Defects in Tungsten Contact CMP

Egan, Bryan; Kim, Hee Jin; Solan, Robert

doi:10.1109/asmc49169.2020.9185217

Cited by 1 publication

(1 citation statement)

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“…29 Drying.-The final step of the wet cleaning process is wafer drying, which is an extremely important process. Usually, hot air blowing, 69 spin drying, 70 vacuum drying, 71 vapor drying, 72 IR lamp drying, 8 slow drying from warm water, 73 and nitrogen drying 70 are the methods adopted for wafer drying. The drying procedures can be classified into three groups: Isopropyl alcohol (IPA) vapor drying, spin drying, and Marangoni drying.…”

Section: Post-cmp Cleaning Process and Equipmentmentioning

confidence: 99%

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

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Chemical mechanical planarization (CMP), a commonly employed process for attaining local and global planarization in integrated circuits fabrication, leaves contaminants and defects on the surface polished. Due to the miniaturization of devices, new materials/ processes for the fabrication of IC circuits are considered, introducing new post-CMP issues. As such, understanding of post-CMP cleaning process is critical to choose an appropriate method for the given material. Here, the types of contaminants and defects generated during the post-CMP process and the issues related to it are discussed. The different physical and chemical cleaning methods employed in the post-CMP cleaning process to eradicate these defects are elucidated.In particular, the PVA brushing method, which is currently preferred, is elaborated upon in detail. The various chemistries, including the newly suggested ones in recent years for cleaning different substrates, are summarized. The post-CMP cleaning methods for various materials such as Cu, Al, W, Co, Ru, InGaAs, Ge, and SiO2 are mainly addressed here. This review also provides the direction of progress for the post-CMP cleaning process in terms of evolution of new techniques and chemistries for the next generation of materials.

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