Formation and properties of self-organized II–VI quantum islands

Kurtz, E.; Shen, Jingjie; Schmidt, M.; Grün, M.; Hong, Soon–Ku; Litvinov, D.; Gerthsen, D.; Oka, Tôru; Yao, Takafumi; Klingshirn, C.

doi:10.1016/s0040-6090(00)00665-9

Cited by 57 publications

(34 citation statements)

References 24 publications

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“…The conclusion that the highenergy component of the QW PL band can not be ascribed to the recombination of free excitons in the QW is proved by: (i) the values of relaxation times, that are typical for excitonic emission from shallow localized states caused by local compositional disorder or interface roughness in II-VI QWs [14,15]; (ii) a pronounced "blue" shift of the PL peak position observed at low temperatures that is usually attributed to thermal escape of excitons from localized to free states of two-dimensional QW [16]. At the same time high values of relaxation times observed for the low-energy component of QW PL band give possibility to ascribe this component to nanoisland-like emission [14]. Therefore, two sets of localized states are formed in CdZnTe QW without CdTe insertion.…”

Section: Discussionmentioning

confidence: 99%

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Borkovska

Korsunska

Sadofyev

et al. 2007

Physica Status Solidi (b)

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.65. Fg, 78.47.+p, 78.55.Et, 78.67.De, 81.15.Hi In present work, the influence of single monolayer CdTe film insertion on the luminescence and structural characteristics of CdZnTe/ZnTe quantum well (QW) was investigated by the photoluminescence (PL) and the high resolution X-ray diffraction (HRXRD) methods. The structures were grown by MBE on GaAs substrate and contained Cd 0.4 Zn 0.6 Te QW of 8 nm thickness with or without 1 monolayer CdTe film embedded in the middle of QW. The low temperature PL investigations showed that insertion of CdTe layer resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. Temperature dependencies of the QW PL spectra as well as time-resolved PL investigations indicated that these changes are caused by the increase of shallow localized state density and the decrease of deep one. The degradation of interface quality as well as the change of the QW composition were found by the HRXRD profiles.

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Section: Discussionmentioning

confidence: 99%

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Borkovska

Korsunska

Sadofyev

et al. 2007

Physica Status Solidi (b)

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“…Usually to stimulate the process of QD formation the growth interruption [5] or thermal annealing step [6] are used. In our QD structures thermal annealing at 340 1C was applied.…”

Section: Methodsmentioning

confidence: 99%

Study of strain relaxation in CdSe/ZnSe nanostructures

Borkovska

Beyer

Gudymenko

et al. 2005

Journal of Crystal Growth

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“…The results of different groups indicate that island formation under the majority of different growth conditions does not occur in a Stranski-Krastanov growth mode, but is rather driven by a strong tendency of Cd to segregate [7][8][9]. It was found that annealing under Se flux [10] or migration enhanced epitaxy (MEE) [11,12] can induce a 2D-3D transition of a strained CdSe layer. The competition between the formation of islands and misfit dislocations as strain relaxation mechanisms plays a key role: surface energy, elastic energy and formation energy of misfit dislocations have to be taken into account in the island formation process [13].…”

Section: Introductionmentioning

confidence: 99%