2010
DOI: 10.1039/b915373j
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Formation and photoluminescence of one-dimensional SiOx dot array–ZnO nanobelt heterostructures

Abstract: We designed and successfully synthesized novel SiO x /ZnO heterostructures via one-step thermal reaction route. Orbicular SiO x dots regularly and alternately arrange in the middle of the up/down surfaces of a nanobelt to form a one-dimensional SiO x dot array, respectively, by their self-assembly. A high-resolution transmission electron microscopy study and a selected area electron diffraction pattern revealed that ZnO nanobelts are crystalline while SiO x dots are amorphous. The formation process of such het… Show more

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Cited by 5 publications
(4 citation statements)
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“…The HRTEM image (Fig. 3(e)) illustrated that the lattice fringes of the composite exhibited interplanar spacing of 0.34 and 0.28 nm, which were indexed to the graphite lattice distance of graphene and the crystal face {100} of hexagonal ZnO crystals [37,42,43], respectively. The high-magnification SEM image (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The HRTEM image (Fig. 3(e)) illustrated that the lattice fringes of the composite exhibited interplanar spacing of 0.34 and 0.28 nm, which were indexed to the graphite lattice distance of graphene and the crystal face {100} of hexagonal ZnO crystals [37,42,43], respectively. The high-magnification SEM image (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The second stage is the epitaxial growth of the rods from the top part to base due to the surrounding Fe vapor as catalyst. Subsequently, the Ostwald ripening [16] processes dominate the evolution of the rods. The larger thin layers adsorb smaller thin layers, and then grow gradually into the NHZOHTs by their self-assembly, being subject to the minimum principle of the surface energy.…”
Section: Resultsmentioning
confidence: 99%
“…Al, Ga, In, Sn, and Sb). [10][11][12] Among them, the group-III elements In and Ga are excellent ntype dopants for ZnO due to their compatible bond length with ZnO (1.92…”
Section: Introductionmentioning
confidence: 99%