Formation and ordering of Ge nanocrystals on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Karmous, A.; Berbézier, Isabelle; Ronda, A.

doi:10.1103/physrevb.73.075323

Cited by 76 publications

(65 citation statements)

References 36 publications

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“…Among many properties of interest, structural information revealing crystal structure, nanocrystal shape, type and density defects is fundamental because they determine almost all other properties of the nanocrystals. Structural information can be obtained by several analytical techniques such as X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering spectroscopy to name a few [2,3]. Ge nanocrystals have been obtained by ion beam synthesis in SiO 2 and post growth annealing [4,5].…”

mentioning

confidence: 99%

Raman and TEM studies of Ge nanocrystal formation in SiO_x:Ge/SiO_x multilayers

Dâna

agan

Tokay

et al. 2007

Phys. Status Solidi (c)

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Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray photoelectron spectroscopy measurements. The films were annealed at temperatures varying from 670 to 1000 °C for 5 to 45 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) data confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and Transmission Electron Microscopy (TEM). As the annealing temperature is raised to 850 °C, single layer of Ge nanocrystals observed at lower annealing temperatures is transformed into a double layer with the smaller sized nanocrystals closer to the substrate SiO 2 interface.

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mentioning

confidence: 99%

Raman and TEM studies of Ge nanocrystal formation in SiO_x:Ge/SiO_x multilayers

Dâna

agan

Tokay

et al. 2007

Phys. Status Solidi (c)

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“…Ordering takes place on the top areas between the FIB holes because of energetic parameters. Mechanisms of formation and ordering of Ge NCs are discussed in [11]. …”

Section: -Selective Epitaxial Growth (Seg) Of Ge Ncs In Si Holes Inmentioning

confidence: 99%

Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO₂layers

Berbézier

Karmous

Ronda

et al. 2005

J. Phys.: Conf. Ser.

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“…The amorphous germanium layer was deposited by Molecular Beam Epitaxy (MBE) in ultra-high vacuum (10 -11 Torr) at room temperature. The Ge-NCs were formed after 30 min in situ annealing at 700°C by the combination of unwetting and crystallization processes (Karmous et al, 2006;Szkutnik et al, 2008). The…”

Section: Sample Elaborationmentioning

confidence: 99%