“…As a new type of luminescent mode, localized exciton has the characteristics of broad emission range and large Stokes shift. A localized energy level usually exists beneath the conduction band, which facilitates the formation of long-wavelength photons and can promote the sub-bandgap emission. − Recently, efficient exciton localization has been demonstrated to contribute to the luminous efficiency and dramatically change the physical behavior of the interband excitations in various materials like MgZnO, carbon nanotubes, halide perovskite, and van der Waals (vdW) heterostructures. − Therefore, localized exciton emission has great application prospects in the development of low-voltage, long-wavelength light-emitting devices. In the past decade, various devices based on localized exciton luminescence have been realized, such as GaN, GaP, and perovskite quantum dot-based light-emitting or laser diodes. − However, issues such as high cost, heavy metal pollution, and stability seriously impede the development of these materials in the field of optoelectronics.…”