2011
DOI: 10.1039/c1jm10781j
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Formation and microstructures of unique nanoporous AAO films fabricated by high voltage anodization

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Cited by 41 publications
(30 citation statements)
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“…In addition, the t b can also be influenced by the formation and dehydration of aluminum hydroxides (e.g., Al(OH) 3 ) during high voltage anodization, which will lead to the oscillations of J a under CV mode. 19,49,52 Considering that J a is mainly related to the movement of ionic species, the nearly exponential decrease of J a can be explained reasonably by the diffusion-limited aluminum anodization process at the pore bottom. 14,19,49,52,53 When an ending J a of 100 A m −2 is applied (Figures 4c and 4d), separated clusters of structural cells can be observed at the barrier layer surface of the sample, which is different from the larger interlinked clusters shown in Figures 1a and 1b.…”
Section: Resultsmentioning
confidence: 97%
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“…In addition, the t b can also be influenced by the formation and dehydration of aluminum hydroxides (e.g., Al(OH) 3 ) during high voltage anodization, which will lead to the oscillations of J a under CV mode. 19,49,52 Considering that J a is mainly related to the movement of ionic species, the nearly exponential decrease of J a can be explained reasonably by the diffusion-limited aluminum anodization process at the pore bottom. 14,19,49,52,53 When an ending J a of 100 A m −2 is applied (Figures 4c and 4d), separated clusters of structural cells can be observed at the barrier layer surface of the sample, which is different from the larger interlinked clusters shown in Figures 1a and 1b.…”
Section: Resultsmentioning
confidence: 97%
“…48 It has been known that the competitive growth of AAO structural cells can be induced by a high enough U a during anodization, thus resulting in the initiation of competitive growth starting site (CGSS, the arrows in Figure 1c, 1f and 1i) in the AAO film. 48,49 Accordingly, separated clusters of structural cells can be formed around CGSS as their central growing site, and each of those larger clusters may contain more than one CGSS (Figures 1d-1f, 500 V). When a higher U a of 600 V is applied, the competitive growth process will be further enhanced, and more CGSS can be formed keeping other anodization conditions unchanged.…”
Section: Resultsmentioning
confidence: 97%
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