Formation and Investigation of Photosensitive Structures Based on Laser-Deposited CuInSe2-2ZnSe Films

Abstract

Thin (CuInSe 2 ) 1--x (2ZnSe) x (0.0 x 0.42) p-type films were synthesised on glass substrates by pulsed Nd : YAG laser deposition at 1064 nm with a repetition rate of 3 Â 10 --2 Hz and a pulse width of 1.1 ms. The applied laser energy was kept in the range 160-190 J per pulse. The target materials and films were characterised by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX) and hot-point probe technique for electrical characterisation. The as-grown layers were single phase and polycrystalline. The films showed a phase transition from chalcopyrite to sphalerite in the region 0.3x 0.4. Photosensitive structure of In/p-(CuInSe 2 -2ZnSe) and n-InSe/p-(CuInSe 2 -2ZnSe) types were obtained. Spectral dependences of the photoconversion relative quantum efficiency in relation to the type of energy barrier and chemical composition of thin films were studied. Analyses of the results showed that the structures based on CuInSe 2 -2ZnSe films could be used as wide-band photodetectors.