Formation and Growth of Sio2Particlesin Low Pressure H2/O2/Ar Flames Doped with Sih4

Lindackers, D.; Strecker, M.G.D.; Roth, P.; Janzen, Christian; Pratsinis, Sotiris E.

doi:10.1080/00102209708935632

Cited by 58 publications

(32 citation statements)

References 28 publications

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“…Figure 6 shows the result of the coagulation simulation. The simulated results agree excellently with the experimental measurements of Lindackers et al [18], predicting the increase in average particle mass with the initial concentration of SiH 4 . [21].…”

Section: Low Pressure H 2 /O 2 /Ar Flame With Sih 4 Precursorsupporting

confidence: 81%

“…The SiH 4 gas phase kinetics are described by a combined mechanism, which contains 18 H 2 /O 2 /Ar reactions plus a further 26 reactions to describe the oxidation of SiH 4 to SiO 2 [18]. All thermodynamic and transport properties were found in the CHEMKIN [19] and TRANFIT [20] libraries, respectively.…”

Section: Low Pressure H 2 /O 2 /Ar Flame With Sih 4 Precursormentioning

confidence: 99%

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A new numerical approach for the simulation of the growth of inorganic nanoparticles

Morgan

Wells

Goodson

et al. 2006

Journal of Computational Physics

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Section: Low Pressure H 2 /O 2 /Ar Flame With Sih 4 Precursorsupporting

confidence: 81%

Section: Low Pressure H 2 /O 2 /Ar Flame With Sih 4 Precursormentioning

confidence: 99%

A new numerical approach for the simulation of the growth of inorganic nanoparticles

Morgan

Wells

Goodson

et al. 2006

Journal of Computational Physics

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“…The mechanism for their growth has been investigated under many conditions and for a variety of chemical systems [18,26,27,8,13,6,3]. In most cases there is an initial phase of coalescent growth [11], where coagulation with small particles caused by high particle inception and rapid surface growth cause the particles to grow into near spherical "primary" particles.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulations of soot aggregation in premixed laminar flames

Morgan

Kraft

Balthasar

et al. 2007

Proceedings of the Combustion Institute

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“…As for assumption 6, it is reasonable to assume constant SiO 2 monomer concentration under steady-state conditions. A similar scheme was used by Lindackers et al [19].…”

Section: Assumption 1 Gives the Reaction Asmentioning

confidence: 99%

Parameters Affecting the Rate and Product of Liquid Silicon Oxidation

et al. 2014

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The oxidation of liquid silicon resulting in silica fume has been the subject of previous investigation due to its importance to occupational health in the silicon alloy production industry. Small-scale experiments and industrial measurements have been carried out in order to understand the mechanisms and kinetics of liquid silicon oxidation. Key questions as to the main factors and conditions determining the rate of fume formation in the industry, still remain. In this work the rate of active oxidation of liquid silicon was studied by experimental investigations in a 75 kW induction furnace, where oxidizing gas was introduced via a lance above the liquid silicon surface. The silica formed as a result of the reaction was collected and the silica fuming rate determined as a function of gas composition and gas flow velocity. The system was also modeled using computational fluid dynamics (CFD) and kinetic modeling. The flux of silica increases with increased gas velocity above the liquid surface, and was found to correlate well with mass transfer rates calculated from impinging jet theory. The size of the silica particles was also found to be dependent on the gas flow rate; smaller average particle size was obtained at higher flow rates. It was found that the most important factor for the silicon oxidation reaction rate is the velocity of the gas in vicinity of the silicon surface (i.e. the boundary layer thickness). The velocity is more important than the actual amount of oxygen delivered to the system per unit time, indicating that oxygen ''efficiency'' is not a strong function of oxygen concentration in the gas. Thus, the gas velocity is the rate determining parameter in determining the mass transport of oxygen to the silicon surface. Results from computational fluid dynamics simulations show that the gas flow was laminar in all experiments and that oxidation takes place within 123Oxid Met (2014) 82:395-413 DOI 10.1007/s11085-014-9498-z 0.5 mm from the silicon surface. The results from the experiments and the CFD model were used to suggest a molecular mechanism of the active oxidation of liquid silicon.

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Formation and Growth of Sio₂Particlesin Low Pressure H₂/O₂/Ar Flames Doped with Sih₄

Cited by 58 publications

References 28 publications

A new numerical approach for the simulation of the growth of inorganic nanoparticles

A new numerical approach for the simulation of the growth of inorganic nanoparticles

Numerical simulations of soot aggregation in premixed laminar flames

Parameters Affecting the Rate and Product of Liquid Silicon Oxidation

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