Formation and growth of black spots in organic light-emitting diodes

McElvain, Jon S.; Antoniadis, Homer; Hueschen, M. R.; Miller, J. N.; Roitman, Danel; Sheats, James R.; Moon, R. L.

doi:10.1063/1.363598

Cited by 306 publications

(180 citation statements)

References 16 publications

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“…1.14( a) shows particle or an asperity that pre-exists on the surface of ITO/glass before the organic deposition [30]. Also shown in Fig 1.14(b) is an organic ""chunk"" that might be deposited by ""spitting"" of the organic material during organic deposition [30]. These foreign particles may be larger in size than the thickness of the organic layers.…”

Section: Dark Spot Causative Phenomenamentioning

confidence: 99%

Dependence of dark spot growth on cathode/organic interfacial adhesion in organic light emitting devices

Phatak¹,

Tsui²,

Aziz³

2012

Journal of Applied Physics

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The growth of dark spots in organic light emitting devices (OLEDs) with cathodes deposited at 65°C instead of the conventional room temperature deposition, or which contain a metal-organic-mixed layer at the cathode contact, is investigated. The results reveal a strong correlation between the growth rate of dark spots and adhesion at the cathode-organic interface, where stronger adhesion results in a slower growth of dark spots. The findings shed light on the beneficial effect of increasing interfacial adhesion on improving the ambient stability of OLEDs. Measures for increasing cathode-organic adhesion can be expected to be particularly beneficial for flexible OLEDs where device protection from the ambient is more challenging.

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Section: Dark Spot Causative Phenomenamentioning

confidence: 99%

Dependence of dark spot growth on cathode/organic interfacial adhesion in organic light emitting devices

Phatak¹,

Tsui²,

Aziz³

2012

Journal of Applied Physics

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“…Here I is a current flowing across the interface, and (= 2 − 1 ) is the difference of relaxation times of two materials facing at the interface. This MW effect suggests that current flow in non-emission region is restricted, possibly due to oxidation [16]. Figure 6.…”

Section: Probing Of Electric Field Distribution and Carrier Behavior mentioning

confidence: 99%

Probing of Electric Field Distribution and Carrier Behavior in Double-Layer Organic Light-Emitting Diodes by a Novel Microscopic Electric-Field-Induced Optical Second-Harmonic Generation Measurement system

Sadakata

Yano

Taguchi

et al. 2014

Trans. Mat. Res. Soc. Japan

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To analyze carrier behaviors leading to electroluminescence (EL) of double-layer organic lightemitting diodes (OLEDs), we used a novel microscopic electric-field-induced optical secondharmonic generation measurement system equipped with a radially polarized pulsed laser beam, which can probe two-dimensional electric field distributions in OLEDs. We showed a relationship between EL emission distribution and interfacial accumulated charge distribution.

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“…A 45 nm thick film of Alq3 was deposited on the FOC using thermal deposition. Both oxygen and water can cause degradation of the Alq3 thin-film (Burrows et al, 1994;McElvain et al, 1996); therefore, FOC light source devices must be protected from the ambient environment to ensure continued operation. Encapsulation of the FOC device was achieved with a 100 nm film of SiO 2 deposited, by electron beam evaporation, over the Alq3 film without breaking vacuum.…”

Section: Planar Fiber Optic Chip Broadband Light Sourcementioning

confidence: 99%