Formation and damage of sidewalls after Cl2/CH4 based reactive ion beam of InP

Abstract

Articles you may be interested inElectrical evaluation of damage on the sidewalls of InP mesa structures fabricated by reactive ion etching with methane and hydrogen Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

Electron cyclotron resonance plasma etching of GaSb-based alloys

“…11 products are not easily desorbed at low temperatures, raising the substrate temperature to 150°C prior to etching increased the etch rate to у45 nm/min and yielded adequately smooth surface morphology, as shown in Fig. 1͑c͒.…”

Etching of 4H-SiC using a NF3 inductively coupled plasma

“…Occasionally, other N 2 has been added. 1 It has also been reported from the etchings of InP and GaN in Cl 2 /H 2 14 and BCl 3 /H 2 /Ar 15 chemistries that adding CH 4 improves the etch profile at the expense of the etch rate probably because of polymer formation on the etched surfaces.…”

Use of a neural network to model SiC etching in a NF3inductively coupled plasma

“…As an additive, O 2 or N 2 gas has been included in SiC etchings. The etchings of InP and GaN in Cl 2 /H 2 [15] and BCl 3 /H 2 /Ar [16] chemistries reported that adding CH 4 improves the etch profile at the expense of the etch rate, probably due to polymer formation on the etched surface. The use of NF 3 gas is advantageous in that it can ensure a sufficient etching efficiency without the additive.…”