Formation and characterization of CuInSe2 thin films from binary CuSe and In2Se3 nanocrystal-ink spray

Lee, Hyungmin; Jeong, Dong-seob; Mun, Taehong; Pejjai, Babu; Reddy, Vasudeva Reddy Minnam; Anderson, Timothy J.; Park, Chinho

doi:10.1007/s11814-016-0097-3

Cited by 13 publications

(5 citation statements)

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“…Semiconducting metal chalcogenide nanoparticles have attracted research attention owing to their tunable absorption properties for photovoltaic and hydrogen production applications [1][2][3][4][5][6]. In particular, there has been an increasing demand for tin sulfide (SnS) nanoparticles in recent years as photovoltaic materials [3], lithium battery anode materials, and photocatalytic materials owing to their favorable optoelectrical properties, which can be easily altered by manipulating the synthesis conditions [7].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

et al. 2021

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Tin sulfide polymorph (π-SnS) nanoparticles exhibit promising optoelectrical characteristics for photovoltaic and hydrogen production performance, mainly because of the possibility of tuning their properties by adjusting the synthesis conditions. This study demonstrates a chemical approach to synthesize π-SnS nanoparticles and the engineering of their properties by altering the Sn precursor concentration (from 0.04 M to 0.20 M). X-ray diffraction and Raman studies confirmed the presence of pure cubic SnS phase nanoparticles with good crystallinity. SEM images indicated the group of cloudy shaped grains, and XPS results confirmed the presence of Sn and S in the synthesized nanoparticles. Optical studies revealed that the estimated energy bandgap values of the as-synthesized π-SnS nanoparticles varied from 1.52 to 1.68 eV. This work highlights the effects of the Sn precursor concentration on the properties of the π-SnS nanoparticles and describes the bandgap engineering process. Optimized π-SnS nanoparticles were used to deposit nanocrystalline π-SnS thin films using the drop-casting technique, and their physical properties were improved by annealing (300 °C for 2 h).

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Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

et al. 2021

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“…42–44 Similarly, the presence of the Se 2− state is evidenced by the Se 3d peaks at a BE of 54.6 eV for all samples, whereas the broad features at BE ∼56 eV and ∼59 eV correspond to oxidized Se due to air contamination at the surface. 42,45,46…”

Section: Resultsmentioning

confidence: 85%

“…[42][43][44] Similarly, the presence of the Se 2À state is evidenced by the Se 3d peaks at a BE of 54.6 eV for all samples, whereas the broad features at BE B56 eV and B59 eV correspond to oxidized Se due to air contamination at the surface. 42,45,46 As shown in Fig. 3c, the main Se 3d peaks (apart from the contributions of surface oxidation) hardly shift as the Cu concentration changes.…”

Section: Xpsmentioning

confidence: 78%

“…[40][41][42] In the case of In 3d, the features of 3d 5/2 and 3d 3/2 doublets were observed at BEs of B444.6 eV and B452.1 eV, respectively, corresponding to trivalent In (In 3+ ). [42][43][44] Similarly, the presence of the Se 2À state is evidenced by the Se 3d peaks at a BE of 54.6 eV for all samples, whereas the broad features at BE B56 eV and B59 eV correspond to oxidized Se due to air contamination at the surface. 42,45,46 As shown in Fig.…”

Section: Xpsmentioning

confidence: 99%

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Chemical states and local structure in Cu-deficient Cu_xInSe_∼2 thin films: insights into engineering and bandgap narrowing

Mohamed¹,

Han²,

Jang³

et al. 2023

J. Mater. Chem. C

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“…SnS crystallizes in an orthorhombic structure with the Pnma space group [7] and exhibits excellent optoelectrical properties such as a strong absorption coefficient (> 10 5 cm −1 ) with direct optical band gap energy ranging from 1.16 to 1.79 eV [8,9] and p-type conductivity with a carrier concentration of the order of 10 11 -10 18 cm −3 [10], which are suitable for thin-film photovoltaic absorbers. In addition, maintenance of stoichiometry is simpler compared with the other conventional light absorbers [11][12][13][14][15]. Another tin-based binary sulfide, SnS 2 , adopts a hexagonal-layered structure with the P3ml space group, similar to the structure of the CdI 2 system [16].…”

Section: Introductionmentioning

confidence: 99%

Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

et al. 2019

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Eco-friendly tin sulfide (SnS) thin films were deposited by chemical solution process using varying concentrations of a sulfur precursor (thioacetamide, 0.50–0.75 M). Optimized thioacetamide concentrations of 0.6 and 0.7 M were obtained for the preparation of single-phase SnS and SnS2 films for photovoltaic absorbers and buffers, respectively. The as-deposited SnS and SnS2 thin films were uniform and pinhole-free without any major cracks and satisfactorily adhered to the substrate; they appeared in dark-brown and orange colors, respectively. Thin-film studies (compositional, structural, optical, and electrical) revealed that the as-prepared SnS and SnS2 films were polycrystalline in nature; exhibited orthorhombic and hexagonal crystal structures with (111) and (001) peaks as the preferred orientation; had optimal band gaps of 1.28 and 2.92 eV; and exhibited p- and n-type electrical conductivity, respectively. This study presents a step towards the growth of SnS and SnS2 binary compounds for a clean and economical power source.

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Formation and characterization of CuInSe2 thin films from binary CuSe and In2Se3 nanocrystal-ink spray

Cited by 13 publications

References 22 publications

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

Chemical states and local structure in Cu-deficient Cu_xInSe_∼2 thin films: insights into engineering and bandgap narrowing

Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

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Formation and characterization of CuInSe2 thin films from binary CuSe and In2Se3 nanocrystal-ink spray

Cited by 13 publications

References 22 publications

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

Chemical states and local structure in Cu-deficient CuxInSe∼2 thin films: insights into engineering and bandgap narrowing

Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

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Chemical states and local structure in Cu-deficient Cu_xInSe_∼2 thin films: insights into engineering and bandgap narrowing