“…In the inner layer a more defected structure, resembling SiO x [10], while in the outer -a more compact (S rises but remain lower than in SiO x ), metal-enriched composition is observed. For example, Then and Pantano [1] observed a silicon rich zone in the outer 20-50 nm layer of the surface layer. Other techniques, more element-specific than S-parameter measurements, must be applied for understanding differences between the two layers observed in our present and previous [2] measurements.…”