2015
DOI: 10.17073/1609-3577-2015-4-279-284
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Formation a Charge Pump in the Structure of Phototransformators

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“…In oxygen containing Cz-Si interstitial oxygen atoms O i form high-mobility oxygen dimers O 2i which associate into clusters of low-temperature thermal donors TD-1 from (SiO n ) + complexes with n < 10 [18]. Simultaneously vacancy clusters form due to the generation of interstitial silicon atoms Si i from thermal donor complexes [10,11,19]. Local spatial formation of clusters with a higher atomic density and the rearrangement of the defect and impurity structure in the excited volume (~6.0% of the surface area) lead to tensile deformation relative to the adjacent non-irradiated area where the initial lattice compression deformation is caused by the smaller atomic radii of impurity boron atoms.…”
Section: Resultsmentioning
confidence: 99%
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“…In oxygen containing Cz-Si interstitial oxygen atoms O i form high-mobility oxygen dimers O 2i which associate into clusters of low-temperature thermal donors TD-1 from (SiO n ) + complexes with n < 10 [18]. Simultaneously vacancy clusters form due to the generation of interstitial silicon atoms Si i from thermal donor complexes [10,11,19]. Local spatial formation of clusters with a higher atomic density and the rearrangement of the defect and impurity structure in the excited volume (~6.0% of the surface area) lead to tensile deformation relative to the adjacent non-irradiated area where the initial lattice compression deformation is caused by the smaller atomic radii of impurity boron atoms.…”
Section: Resultsmentioning
confidence: 99%
“…Many studies have also dealt with the formation of defect oxygen containing regions in wafer bulk for internal gettering [6,7]. Many works [8][9][10][11][12][13][14] have reported experiments for synthesis of hidden n conductivity regions in the bulk of p conductivity wafers using various methods. It has been suggested to use hidden n conductivity regions for the synthesis of charge pumps in base p conductivity regions of photoelectric converters [9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
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