The dielectric screening from the
disordered media surrounding
atomically thin transition metal dichalcogenides (TMDs) monolayers
modifies the effective defect energy levels and thereby the transport
and energy dynamics of excitons. In this work, we study this effect
in WSe2 monolayers for different combinations of surrounding
dielectric media. Specifically, we study the source of the anomalous
diffusion of excitons in the WSe2 monolayer and attribute
the anomaly to the modification of the energy distribution of defect
states in different disordered dielectric environments. We use this
insight to manipulate exciton transport by engineering the dielectric
environment using a graphene/hexagonal boron nitride (h-BN) moiré
superlattice. Finally, we observe that the effect of dielectric disorder
is even more significant at high excitation fluences, contributing
to the nonequilibrium phonon drag effect. These results provide an
important step toward achieving control over the exciton energy transport
for next-generation opto-excitonic devices.