Foreword to special issue on “Qualitative Methods in Engineering Science”

Quintanilla, R.; Fu, Yibin

doi:10.1016/j.ijengsci.2015.01.001

Cited by 1 publication

(3 citation statements)

References 10 publications

(1 reference statement)

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“…In more general terms, the presented results reveal how one should be cautious when analyzing the XPS spectra solely in terms of the electronegativities of elements and number of oxygen neighbors. Furthermore, the oxidation-induced CLSs of a semiconductor are interpreted, which is further essential to understand phenomena like the ALD mechanisms 4 and the formation of surface defects harmful to electronics and photonics devices 10,16–19 . The HfO 2 /InP interface is a prototypical insulator/semiconductor junction and also a potential component for devices like transistors 10,16–24 , nanowire solar cells 25–27 , and infrared detectors 28,29 .…”

Section: Introductionmentioning

confidence: 99%

“…It is essential to minimize the amount of interfacial defects, which can cause for example the Fermi-level pinning, non-radiative recombination, and leakage currents via the defect-induced electron states. Significant progress has been made in reducing the densities of such harmful band gap states (e.g., refs 10,16–24 ). The development of atomic layer deposition (ALD) of insulator films has significantly aided this progress.…”

Section: Introductionmentioning

confidence: 99%

“…To reduce the defect concentration and to improve device performance, it is crucial to understand and control the chemical and physical properties of the HfO 2 /III-V interfaces, where III-V crystals become oxidized. XPS has been widely utilized in the studies to find interrelationships between the chemical composition and electrical properties of the HfO 2 /III-V interface 10,16–19 .…”

Section: Introductionmentioning

confidence: 99%

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Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Mäkelä

Lahti

Tuominen

et al. 2019

Sci Rep

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X-ray photoelectron spectroscopy (XPS) is one of the most used methods in a diverse field of materials science and engineering. The elemental core-level binding energies (BE) and core-level shifts (CLS) are determined and interpreted in the XPS. Oxidation is commonly considered to increase the BE of the core electrons of metal and semiconductor elements (i.e., positive BE shift due to O bonds), because valence electron charge density moves toward electronegative O atoms in the intuitive charge-transfer model. Here we demonstrate that this BE hypothesis is not generally valid by presenting XPS spectra and a consistent model of atomic processes occurring at HfO2/InP interface including negative In CLSs. It is shown theoretically for abrupt HfO2/InP model structures that there is no correlation between the In CLSs and the number of oxygen neighbors. However, the P CLSs can be estimated using the number of close O neighbors. First native oxide model interfaces for III-V semiconductors are introduced. The results obtained from ab initio calculations and synchrotron XPS measurements emphasize the importance of complementary analyses in various academic and industrial investigations where CLSs are at the heart of advancing knowledge.

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