2003
DOI: 10.1002/pssa.200306547
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Forecasting of electrical breakdown in porous silicon using Flicker noise spectroscopy

Abstract: PACS 72.70.+m, 77.22.Jp Owing to the influence of environment and impact of energy fluxes (electric polarisation, heating, photon irradiation, etc.) physical and chemical properties of porous semiconductors (and other materials as well) experience changes which have to be monitored in order to distinguish the moment when the properties become out of a working range. There is a necessity of forecasting the development of catastrophic events in the porous film. In the present work we study the possibility of … Show more

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Cited by 9 publications
(7 citation statements)
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“…Fluctuations of electric current in porous silicon at a fixed anodic voltage were studied by Parkhutik et al [32]. The operating temperature was linearly increased with time from 20 to 250°С, which corresponds to the breakdown conditions.…”
Section: Precursors Of Electric Breakdown In Thin Porous Silicon Filmsmentioning
confidence: 99%
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“…Fluctuations of electric current in porous silicon at a fixed anodic voltage were studied by Parkhutik et al [32]. The operating temperature was linearly increased with time from 20 to 250°С, which corresponds to the breakdown conditions.…”
Section: Precursors Of Electric Breakdown In Thin Porous Silicon Filmsmentioning
confidence: 99%
“…FNS has been used to study the dynamics of various processes [26][27][28][29][30][31][32][33][34][35]: voltage fluctuations in electrochemical systems; fluctuations of velocity components in turbulent flows; fluctuation dynamics of solar activity, and so on. It has also been used to parameterize (in terms of "passport" parameters and/or patterns) surface structures studied with scanning probe microscopy, and chaotic segments of infrared or Raman spectra for complex compounds, which are often referred to as the "fingerprint" regions.…”
Section: General Remarksmentioning
confidence: 99%
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“…The FNS is a time-series analysis method that introduces parameters characterizing the components of stochastic signals in different frequency ranges [59]. The method has found numerous applications; among others it is worth mentioning about the use of FNS to the parameterization of images produced by the atomic force microscopy (AFM) [51], analysis of geological signals measured in seismic areas [15, 49], determination of electric breakdowns precursors in thin porous silicon films [39], analysis of electric potential fluctuations in electromembrane systems [58] or monitoring cutting processes and development of stability maps for materials [29]. The FNS method was also successfully applied to some problems in a medical data processing.…”
Section: Introductionmentioning
confidence: 99%
“…The FNS nonstationarity factor was successfully used for finding precursors of earthquakes [1, 4 5] and electric breakdowns in semiconductor systems [6].…”
Section: Fns Nonstationarity Factormentioning
confidence: 99%