Forced convection in vertical Bridgman configuration with the submerged heater

Meyer, Sven; Ostrogorsky, A.G.

doi:10.1016/s0022-0248(96)00661-6

Cited by 24 publications

(23 citation statements)

References 15 publications

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“…Once this objective is achieved, the single crystals are expected to be grown by using GaSb seeds. The effect of the baffle in the melt and its rotation, or oscillation, during growth has been found to improve the homogeneity of Ga-doped Ge [10,11]. The same is expected to be true in InGaSb where InSb is rejected at the S-L interface during growth of InGaSb, resulting in a non-uniform axial profile of indium in the grown crystal.…”

Section: Growth Of Ingusbmentioning

confidence: 95%

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb

Dutta¹,

Ostrogorsky²,

Gutmann³

1997

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DISCLAIMERAbstract. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

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Section: Growth Of Ingusbmentioning

confidence: 95%

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb

Dutta¹,

Ostrogorsky²,

Gutmann³

1997

Self Cite

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“…Several authors [17,[24][25][26] had used forced convection as a method to control the growth interface shape. In particular, Capper [17] explained that one of the major benefits to using forced convection in the Hg (1Àx) Cd x Te system was manipulation of interface shape coupled with the increased homogenization of the melt.…”

Section: Control Of Interface Shapementioning

confidence: 99%

“…Several different techniques for melt stirring have been applied to vertical Bridgman growth systems including: the accelerated crucible rotation technique (ACRT) [16][17][18][19][20][21][22], rotating submerged baffles [23,24], axial vibrational control (AVC) [25,26], and coupled vibrational stirring (CVS) [27][28][29][30][31]. ACRT has been the most widely studied of these techniques.…”

Section: Introductionmentioning

confidence: 99%

Control of growth interface shape using vibroconvective stirring applied to vertical Bridgman growth

Zawilski

Custódio

DeMattei

et al. 2005

Journal of Crystal Growth

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“…As crystal growth progresses, the crystal solidifies and the submerged heater is slowly raised in order to maintain a constant lower melt depth. Meyer and Ostrogorsky (1997) performed experimental studies of the flow visualization with rotation during the Bridgman process with a submerged heater. The lower melt is continuously replenished with liquid from the upper melt with a composition chosen to offset the increasing dopant level in the lower melt due to rejection at the crystal growth front for dopants with segregation coefficients less than unity.…”

Section: Introductionmentioning

confidence: 99%