Focusing the beam of a compact, repetitively pulsed x-ray laser to study the interaction of radiation with metallic targets and x-ray reflectometry

Artyukov, I. A.; Benware, B.; Виноградов, А. В.; Kas'yanov, Yu. S.; Кондратенко, В. В.; Macchietto, C. D.; Ozols, Andris; Rocca, J. J.; Chilla, J. L. A.

doi:10.1070/qe2000v030n04abeh001707

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…These types of mirrors were developed specifically [40] to manipulate the EUV beam from the pulsed Ne-like Ar capillary-discharge lasers [3,4]. The high pulse energy of these lasers has been successfully utilized for the study of the reflectivity of Sc/Si ML mirrors, and, using a focused beam, for the ablation of materials [41,42]. In our recent letter [43,44] we reported on the damage threshold in Sc/Si mirrors under irradiation with the EUV laser.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation

Pershyn¹,

Zubarev²,

Voronov³

et al. 2009

J. Phys. D: Appl. Phys.

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Specific structural changes in Sc/Si multilayer mirrors irradiated with extreme ultraviolet (EUV) laser single pulses (λ = 46.9 nm) at near damage threshold fluences (0.04-0.23 J cm −2 ) are analysed. We have identified melting of surface layers as the basic degradation mechanism for the mirrors. Both heat generation during silicide formation and low heat conduction of the layered system significantly decreases the degradation threshold of Sc/Si multilayer mirrors compared with bulk materials. The results are relevant to the use of the multilayer mirrors for shaping and directing the intense beams produced by the new generation of coherent EUV sources.

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Section: Introductionmentioning

confidence: 99%

Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation

Pershyn¹,

Zubarev²,

Voronov³

et al. 2009

J. Phys. D: Appl. Phys.

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“…[31][32][33] The Sc/Si MXMs were specially designed and fabricated as optics for capillary-discharge lasers capable of providing the radiation at λ=46.9 nm with fluences up to 100 J/cm 2 per pulse. 30 We reported earlier about some results on the damage to Sc/Si MXMs under irradiation of laser pulses. [34][35] In this work we address the interaction of x-ray laser radiation with MLs featuring structural, phase, and morphological modifications under conditions of different heat removal from the irradiated area, and different stress states.…”

Section: Introductionmentioning

confidence: 99%

Structural transformations in Sc/Si multilayers irradiated by EUV lasers

Voronov

Zubarev²,

Pershyn³

et al. 2007

SPIE Proceedings

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Multilayer mirrors for the extreme ultraviolet (EUV) are key elements for numerous applications of coherent EUV sources such as new tabletop lasers and free-electron lasers. However the field of applications is limited by the radiation and thermal stability of the multilayers. Taking into account the growing power of EUV sources the stability of the optics becomes crucial. To overcome this problem it is necessary to study the degradation of multilayers and try to increase their temporal and thermal stability. In this paper we report the results of detailed study of structural changes in Sc/Si multilayers when exposed to intense EUV laser pulses. Various types of surface damage such as melting, boiling, shock wave creation and ablation were observed as irradiation fluencies increase. Cross-sectional TEM study revealed that the layer structure was completely destroyed in the upper part of multilayer, but still survived below. The layers adjacent to the substrate remained intact even through the multilayer surface melted down, though the structure of the layers beneath the molten zone was noticeably changed. The layer structure in this thermally affected zone is similar to that of isothermally annealed samples. All stages of scandium silicide formation such as interdiffusion, solid-state amorphization, silicide crystallization etc., are present in the thermally affected zone. It indicates a thermal nature of the damage mechanism. The tungsten diffusion barriers were applied to the scandium/silicon interfaces. It was shown that the barriers inhibited interdiffusion and increased the thermal stability of Sc/Si mirrors.

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Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

et al. 2011

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Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∼27 nm and barrier layers of CrB 2 0.3-and 0.7-nm thick within the temperature range of 420-780 K were studied by methods of small-angle Xray reflectivity (λ = 0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed.

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Focusing the beam of a compact, repetitively pulsed x-ray laser to study the interaction of radiation with metallic targets and x-ray reflectometry

Cited by 4 publications

References 5 publications

Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation

Mechanisms of radiation damage to Sc/Si multilayer mirrors under EUV laser irradiation

Structural transformations in Sc/Si multilayers irradiated by EUV lasers

Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

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