Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

Scholz, Sven; Schott, Rüdiger; Labud, P. A.; Somsen, Christoph; Reuter, D.; Ludwig, Arne; Wieck, A. D.

doi:10.1016/j.jcrysgro.2017.04.013

Cited by 5 publications

(4 citation statements)

References 36 publications

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“…The second approach involves FIB treatment of the surface followed by ultra-high vacuum (UHV) annealing of the substrate. This technique operates as follows: during annealing, embedded ions generate metal catalyst droplets (such as Ga or Au) on the surface at the treatment sites, enabling self-catalytic NW growth within precisely defined irradiation areas [10][11][12][13][14][15]. This approach allows for considerable variation in the ion dose and distance between exposure points.…”

Section: Introductionmentioning

confidence: 99%

“…Particularly, specific parameters of the ion beam treatment make it possible to achieve 100% yield of vertically oriented NWs. By employing this approach, NWs based on various semiconductor materials can be formed, such as GaAs NWs using Ga [15,16] and Au [12,14] ions, Si NWs using Ga ions [17], InAs NWs using Au ions [13], etc. It is also worth noting that substantial suppression of NW growth is observed on surfaces irradiated with an accelerating voltage of 30 kV [10,11].…”

Section: Introductionmentioning

confidence: 99%

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Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Shandyba,

Kirichenko,

Sharov

et al. 2023

Nanotechnology

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We reveal a novel phenomenon observed after self-catalytic growth of GaAs nanowires on Si(111) substrates treated with a Ga focused ion beam (FIB). Depending on the ion dose, nanowire arrays with various geometrical parameters can be obtained. A minor treatment of the substrate enables a slight increase in the surface density of nanowires relative to an unmodified substrate area. As the ion dose is increased up to ~0.1 pC/µm2, the growth of GaAs nanowires and nanocrystals is suppressed. However, a further increase in the ion dose stimulates the crystal growth leading to the formation of extremely thin nanowires (39 ± 5 nm) with a remarkably high surface density of up to 15 µm-2. Resting upon an analysis of the surface structure before and after stages of ion-beam treatment, ultra-high vacuum annealing and nanowire growth, we propose a mechanism underlying the phenomenon observed. We assume that the chemical interaction between embedded Ga ions and a native Si oxide layer leads either to the enhancement of the passivation properties of the oxide layer within FIB-modified areas (at low and middle ion doses), or to the etching of the passivating oxide layer by excess Ga atoms, resulting in the formation of pores (at high ion doses). Due to this behavior, local fabrication of GaAs nanowire arrays with a diverse range of characteristics can be implemented on the same substrate. This approach opens a new way for self-catalytic growth of GaAs nanowires.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Shandyba,

Kirichenko,

Sharov

et al. 2023

Nanotechnology

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“…Alternatively, direct patterning of holes could lead to increased positioning flexibility and a simplified fabrication process. This can be achieved by a focused ion beam (FIB) [25], an approach which has so far been primarily explored in proof-of-principle studies [26][27][28][29][30][31][32][33]. These studies are mostly random area growth, but suggest that single nanowire positioning should be achievable after optimizing patterning conditions.…”

Section: Introductionmentioning

confidence: 99%

Focused ion beam lithography for position-controlled nanowire growth

et al. 2023

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To exploit the promising properties of semiconductor nanowires and ensure the uniformity required to achieve device integration, their position on the growth substrate must be controlled. This work demonstrates the direct patterning of a SiO2/Si substrate using focused ion beam (FIB) patterning to control self-catalyzed GaAsSb nanowire growth in molecular beam epitaxy (MBE). Besides position control, FIB patterning parameters influence nanowire yield, composition and structure. Total ion dose per hole is found to be the most important parameter. Yield of single nanowires ranges from ≈ 34% to ≈ 83%, with larger holes dominated by multiple nanowires per hole. Areas exposed to low ion beam doses are selectively etched by routine pre-MBE HF cleaning, enabling patterning and nanowire nucleation with minimal damage to the Si substrate. The optical and electronic properties of nanowires are found to depend on the ion dose used during patterning, indicating the potential for FIB patterning to tune nanowire properties. These findings demonstrate the possibility for a FIB lithography protocol which could provide a rapid and direct patterning process for flexible controlled nanowire growth.

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“…Using FIB, the structural changes induced by ion beams allows the localized manipulation of different sample regions. This leads to site‐ controlled growth of QDs, nanowires (NWs), and also their electronic properties can be changed locally, for example as in the production of inplane gate transistors (IPGs) . This complements the good control of MBE structures in growth direction along with the lateral resolution of the FIB.…”

Section: Introductionmentioning

confidence: 99%

Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy

Scholz

Schott

Schmidt

et al. 2018

Physica Status Solidi (b)

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The combination of focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) as ultrahigh-vacuum (UHV) processes allows for nm-resolution fabrication both in lateral as well as in growth direction. The authors exploit self-organized growth of Stranski-Krastanov In x Ga 1-x . As quantum dots and III-V nanowire structures, both initiated by FIB-implantation of different ion species. Samples are transferred between the FIB and the MBE by UHVtunnels or a separate UHV-suitcase which links instruments far away from each other. Since the whole process is within the UHV, no wet or dry chemistry deteriorates the solid-state interfaces which increases the purity and the reproducibility. Since the available FIB ion species are not only Gallium, but around 40 elements of the periodic table, this method is very versatile and covers even elements which are usually not introduced in a GaAs-MBE chamber due to purity reasons. Thus, beside site controlled growth any FIB doping, before, in between, due to UHV transfer and after the MBE-growth becomes possible.

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Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

Cited by 5 publications

References 36 publications

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Focused ion beam lithography for position-controlled nanowire growth

Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy

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