Focused ion beam induced deposition of gold

Shedd, G.M.; Lezec, Henri J.; Dubner, A. D.; Melngailis, J.

doi:10.1063/1.97287

Cited by 116 publications

(39 citation statements)

References 10 publications

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“…Charged particle beam-induced deposition (Matsui et al 2000, Shedd et al 1986) is widely used, for example in focused ion-beam (FIB) technology for the formation of metal layers and for the repair of semiconductor circuits. To achieve spatial resolutions better than 100 nm, electron beam-induced deposition (EBID) and etching (EBIE) have been recently explored as a technique for fabrication or repair.…”

Section: Introductionmentioning

confidence: 99%

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

et al. 2006

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Summary: Electron beam-induced deposition (EBID) provides a simple way to fabricate submicron-or nanometerscale structures from various elements in a scanning electron microscope (SEM). The growth rate and shape of the deposits are influenced by many factors. We have studied the growth rate and morphology of EBID-deposited nanostructures as a function of the tungsten hexafluoride (WF 6 ) and tetraethylorthosilicate (TEOS) precursor gas pressure and growth time, and we have used Monte Carlo simulations to model the growth of tungsten and silicon oxide to elucidate the mechanisms involved in the EBID growth. The lateral radius of the deposit decreases with increasing pressure because of the enhanced vertical growth rate which limits competing lateral broadening produced by secondary and forward-scattered electrons. The morphology difference between the conical SiO x and the cylindrical W nanopillars is related to the difference in interaction volume between the two materials. A key parameter is the residence time of the precursor gas molecules. This is an exponential function of the surface temperature; it changes during nanopillar growth and is a function of the nanopillar material and the beam conditions.

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Section: Introductionmentioning

confidence: 99%

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

et al. 2006

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“…2͑b͒ and 2͑c͒, the absolute deposition yield is plotted against the absolute yields of secondary electrons and sputtering, respectively. The deposition yield varies linearly with the sputtering yield having a slope of about 2.0 and an offset of about 0.09 nm 3 / ion. For constant ion energy, the deposition yield is proportional to the secondary electron yield.…”

Section: Resultsmentioning

confidence: 99%

“…Generally, IBID is considered a very complex process with possible contributions from primary ions, sputtered atom or ions, secondary electrons ͑SEs͒ and thermal spikes. 3 Some studies relate IBID to sputtered atom impact and others to secondary electron impact. Dubner et al found that the deposition yield is proportional to the calculated stopping power and, consequently, explained IBID in terms of the energy transfer via a cascade of atom-atom collisions to adsorbed precursor molecules.…”

Section: 2mentioning

confidence: 99%

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

Chen¹,

Salemink²,

Alkemade³

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors report the results of investigating two models for ion-beam-induced deposition ͑IBID͒. These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were measured in situ during IBID using ͑CH 3 ͒ 3 Pt͑C P CH 3 ͒ as functions of Ga + ion incident angle ͑0°-45°͒ and energy ͑5-30 keV͒. The deposition yield and the secondary electron yield have the same angular dependences but very different energy dependences. It was also found that the deposition yield per secondary electron is very high ͑ӷ10͒. However, within the investigated angle and energy ranges, the deposition yield is linearly related to the sputtering yield, the offset of which might be due to the contribution of primary ions. They conclude that the sputtered atom model describes IBID better than the secondary electron model.

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“…19 One or more types of particles can contribute to IBID. In previous work, we have observed significant deposition outside the irradiated area during IBID.…”

Section: A Effect Of Scattered Particlesmentioning

confidence: 99%

Proximity effect in ion-beam-induced deposition of nanopillars

Chen

Salemink

Alkemade

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Ion-beam-induced deposition ͑IBID͒ is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar. On a semiconducting bulk Si and on an insulating Si 3 N 4 membrane the first pillar gets broader, whereas on Si it starts to bend. They attribute the broadening and bending to the additional deposition induced by the particles scattered from the growing second pillar. On Si the second pillar is taller than the first one, while on Si 3 N 4 it is shorter and rougher. This difference points to an important role of the substrate conductivity in the proximity effect. In a conductive environment the changes in the second pillar are mainly caused by a precursor coverage enhancement in the pillar surface. This enhancement is caused by precursor molecules, which are reflected or desorbed from the first pillar. In the case of an insulating environment, the changes in the second pillar are mainly caused by the reduction in the substrate surface charging due to the presence of the first pillar.

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Focused ion beam induced deposition of gold

Cited by 116 publications

References 10 publications

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

Proximity effect in ion-beam-induced deposition of nanopillars

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