2006
DOI: 10.1007/3-540-27453-7_11
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Focused Ion Beam as a Scanning Probe: Methods and Applications

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Cited by 10 publications
(14 citation statements)
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“…The Focused Ion Beam (FIB) is a valuable tool in the semiconductor industry since it enables imaging and modification of structures on the nanometer size scale [1]. The most important property of a FIB, the spotsize versus current curve, is largely determined by the transverse reduced brightness (hereafter abbreviated as the brightness) and longitudinal energy spread of its ion source.…”
Section: Introductionmentioning
confidence: 99%
“…The Focused Ion Beam (FIB) is a valuable tool in the semiconductor industry since it enables imaging and modification of structures on the nanometer size scale [1]. The most important property of a FIB, the spotsize versus current curve, is largely determined by the transverse reduced brightness (hereafter abbreviated as the brightness) and longitudinal energy spread of its ion source.…”
Section: Introductionmentioning
confidence: 99%
“…In normal operating conditions, the stainless-steel chamber is maintained in the range of 10 −7 mbar. For all tests reported in this work, the tilt angle 1 was fixed at − 0.4 • and the distance between the beam and the sample was selected by focusing in the eucentric point 2 (Raffa et al, 2006). Figure 2 illustrates an example of circular opening (diameter 5 µm) performed via FIB milling in a W wire coated with a 500 nm thick SiO 2 layer.…”
Section: Electrode Opening Via Fib Millingmentioning
confidence: 99%
“…FIB systems (Raffa et al, 2006) enable imaging, localized milling (Tseng, 2004), and deposition of conductors and insulators (Reyntjens and Puers, 2000) with high precision. FIB milling is a direct write micromachining technique, able of sub-100 nm resolution.…”
Section: Electrode Opening Via Fib Millingmentioning
confidence: 99%
“…The removal of sample material is achieved using a high ion current beam. By scanning the beam over the substrate, an arbitrary shape can be etched, whereby physical sputtering of the sample material occurs [5]. The milling process speed can be increased by using an etching gas Xenon difluoride (XeF 2 ) into the work chamber during milling.…”
Section: Fib Imaging Milling and Depositionmentioning
confidence: 99%
“…The main difference is better resolution, but lower deposition rate of FIB. The deposited material is not fully pure because organic contaminations and Ga + ions are inevitably included [5]. The smallest features that can be deposited are of the order of 100 nm (lateral dimension).…”
Section: Fib Imaging Milling and Depositionmentioning
confidence: 99%