Focus-Induced Photoresponse Technique-Based NIR Photodetectors Containing Dimeric Polymethine Dyes

Kasparavičius, Ernestas; Nakamichi, Shinji; Daškevičienė, Marytė; Marčinskas, Mantas; Svirskaite, Lauryna Monika; Lungenschmied, Christoph; Malinauskas, Tadas; Getautis, Vytautas; Bruder, Ingmar

doi:10.1007/s11664-019-07375-4

Cited by 7 publications

(15 citation statements)

References 32 publications

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“…S4 ) for enhanced 3D depth sensing applications. To the best of our knowledge, bias tunable FIP detectors have not been reported by other groups before 13 , 14 .…”

Section: Device Technology and Physicsmentioning

confidence: 80%

“…We observe a significant current breakdown, once the a-Si:H thin-film detector is placed in focus of a 488 nm laser beam with a total power µW. Compared to state of the art FIP sensors 13 , 14 , the FIP in a-Si:H samples occurs at irradiances down to at least µW/mm 2 far out of focus (cf. Supplementary Information ).…”

Section: Methodsmentioning

confidence: 91%

“…Compared to ToF based depth sensing, a read-out of the photocurrent/-voltage as well as the extensive subsequent data processing for image reconstruction is not required. FIP detectors based on the nonlinear, irradiance dependent photoresponse have already been demonstrated in various thin-film devices 13 , 14 that obtain a significant density of states within the bandgap, such as organic solar cells or lead sulfide (PbS) photoconductors. As demonstrated in 13 , the read-out of two analogue sensor outputs at different focus spot positions enables: Maximum scalability (100% FF) since the depth information can directly be extracted from the detected FIP signal from a single viewpoint, Highly precise distance measurements with depth resolutions of at as well as long-range distance measurements up to at least , and Low-light level detection at irradiances down to 10 µW/mm 2 in the visible range.…”

Section: Introductionmentioning

confidence: 99%

“…High defect densities and low charge carrier mobilities limit both, the bandwidth and responsivities in state of the art reported FIP detectors 13 , 14 . Physical phenomena leading to the FIP, differ significantly depending on the device architecture, the mode of operation and most importantly the material compositions and qualities.…”

Section: Introductionmentioning

confidence: 99%

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High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applications

Bablich

Müller

Kienitz

et al. 2022

Sci Rep

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A large and growing number of applications benefit from simple, fast and highly sensitive 3D imaging sensors. The Focus-Induced Photoresponse (FIP) can achieve 3D sensing functionalities by simply evaluating the irradiance dependent nonlinear sensor response in defect-based materials. Since this advantage is intricately associated to a slow response, the electrical bandwidth of present FIP detectors is limited to a few $${\text{kHz}}$$ kHz only. The devices presented in this work enable modulation frequencies of 700 kHz and beat frequency detection up to at least 3.8 MHz, surpassing the bandwidth of reported device architectures by more than two orders of magnitude. The sensors achieve a SNR of at least $$\sim 53\;{\text{dB}}$$ ∼ 53 dB at $$115\;{\text{cm}}$$ 115 cm and a DC FIP detection limit of 0.6 µW/mm2. The mature and scalable low-temperature a-Si:H process technology allows operating the device under ambient air conditions waiving additional back-end passivation, geometrical fill factors of $$100\%$$ 100 % and tailoring the FIP towards adjustable 3D sensing applications.

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“…S4 ) for enhanced 3D depth sensing applications. To the best of our knowledge, bias tunable FIP detectors have not been reported by other groups before 13 , 14 .…”

Section: Device Technology and Physicsmentioning

confidence: 80%

Section: Methodsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applications

Bablich

Müller

Kienitz

et al. 2022

Sci Rep

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“…Although state-of-the-art FIP sensors combine several highly attractive advantages, comparatively low cut-off frequencies stagnate at very low bandwidths, severely restricting their widespread application. This restriction stems from photodetector technologies based on high defect densities and low charge carrier mobility materials, preventing a fast optical distance acquisition above 20 kHz [5,8,9]. Here, we present FIP detector technologies based on amorphous silicon that resolve such bandwidth limitations and expand photodetector speed by more than two orders of magnitude utilizing just one single-pixel photodetector.…”

mentioning

confidence: 99%

High‐speed focus‐induced photoresponse in amorphous silicon photodetectors for optical distance measurements

Bablich

Müller

Kienitz

et al. 2022

Electronics Letters

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The Focus-Induced Photoresponse (FIP) enables 3D sensing capabilities by evaluating the irradiance dependent non-linear detector response in defect-based materials. Since this advantage is intricately associated to a slow response, the electrical bandwidth of previous FIP sensors is limited to a few kHz only. We report the FIP in amorphous silicon pin photodiodes and propose a sensor read out based on a harmonics analyses. We achieve modulation frequencies of 500 kHz and a non-linear beat frequency detection up to at least 3.5 MHz, surpassing the bandwidth of state-of-the-art architectures by at least a factor of 175. The FIP sensors further achieve signal-to-noise ratios of ∼50 dB, depth resolutions of at least 5.4 mm at 126 cm and a DC FIP detection limit of 1.3 µW/mm 2 .

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Inkjet‐Printed Microlenses Integrated onto Organic Photodiodes for Highly Accurate Proximity Sensing

Seiberlich

Zhang

Tunç

et al. 2023

Advanced Sensor Research

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The current needs for optical detectors in industrial and consumer electronics require sensors with thin form‐factors, high performance and a facile fabrication and integration. In this work, the integration of inkjet printed microlenses onto solution‐processed organic photodiodes is demonstrated to enable high‐accuracy proximity sensing via the focused induced photoresponse (FIP) effect. By precisely controlling the ink deposition and substrate properties, it is able to tune the microlens focal length from 150 to 775 μm. This allows to the appropriate microlens design to be chosen to take advantage of the FIP effect. By comparing the photocurrent ration of a device with and without microlenses, absolute proximity measurements in the range of 100 μm to 4 mm are achieved. Champion devices yield an accuracy of down to ±50 μm within three standard deviations (3σ). These results highlight the potential of the microlens‐OPD integration for highly accurate and close‐distance proximity applications in a variety of fields.

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Focus-Induced Photoresponse Technique-Based NIR Photodetectors Containing Dimeric Polymethine Dyes

Cited by 7 publications

References 32 publications

High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applications

High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applications

High‐speed focus‐induced photoresponse in amorphous silicon photodetectors for optical distance measurements

Inkjet‐Printed Microlenses Integrated onto Organic Photodiodes for Highly Accurate Proximity Sensing

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