FM noise suppression and linewidth reduction in an injection-locked semiconductor laser

Mogensen, F.; Olesen, H.; Jacobsen, Gunnar

doi:10.1049/el:19850492

Cited by 57 publications

(17 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…(6)- (9). The pure-mode solution satisfies the conditions P -N 1+2N ( 10) In order to analyze Rj as a function of 7, we consider N as a parameter ( -1 /2 < N ^ P). Using (10), we first compute Rj and then 7.…”

Section: Te Injectionmentioning

confidence: 99%

“…At the same time, injection locking induced by a TE external signal appeared as an interesting method to reduce laser linewidth [10], enhance the modulation bandwidth [11], syn chronize lasers for microwave generation [12,13], or measure the linewidth enhancement factor [14,15], The injection lock ing phenomenon in Fabry-Perot cavity SLs has been the topic of a large number of papers [16]. Theoretical and experimental studies have revealed several forms of pulsating intensity oscillations [17], A notable feature of the optically injected laser is that its response can be described by three nonlinear or dinary differential equations.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analytical stability boundaries of an injected two-polarization semiconductor laser

2015

View full text Add to dashboard Cite

The classical problem of a semiconductor laser subject to polarized injection is revisited. From the laser rate equations for the transverse electric (TE) and transverse magnetic (TM) modes, we first determine the steady states. We then investigate their linear stability properties and derive analytical expressions for the steady, saddle-node, and Hopf bifurcation points. We highlight conditions for bistability between pure- and mixed-mode steady states for the laser subject to either TE or TM injection. To our knowledge, the first case has not been documented yet. An important parameter is the ratio of the polarization gain coefficients and we explore its effect on the stability and bifurcation diagrams.

show abstract

Section: Te Injectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analytical stability boundaries of an injected two-polarization semiconductor laser

2015

View full text Add to dashboard Cite

show abstract

“…The magnitude of the frequency response is then (13) where (14) Therefore, the frequency response can be easily determined by (13) and its auxiliary equations.…”

Section: B Small-signal Solutionsmentioning

confidence: 99%

Frequency Response Enhancement of Optical Injection-Locked Lasers

Lau

Sung

2008

IEEE J. Quantum Electron.

130

View full text Add to dashboard Cite

Abstract-The modulation response of injection-locked lasers has been carefully analyzed, theoretically and experimentally, with a focus on the strong optical injection regime. We derive closed-form solutions to the relaxation oscillation (resonance) frequency and damping term, as well as the low-frequency damping term, and discuss design rules for maximizing resonance frequency and broadband performance. A phasor model is described in order to better explain the enhancement of the resonance frequency. Experimental curves match closely to theory. Record resonance frequency of 72 GHz and broadband results are shown.

show abstract

“…This behavior results in reduced device performance for many applications [1], [2]; hence, it is important to devise methods for avoiding or dynamically controlling the instabilities.…”

Section: Introductionmentioning

confidence: 99%

Entraining power-dropout events in an external-cavity semiconductor laser using weak modulation of the injection current

Sukow

Gauthier

2000

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Abstract-We measure experimentally the effects of injection current modulation on the statistical distribution of time intervals between power-dropout events occuring in an external-cavity semiconductor laser operating in the low-frequency fluctuation regime. These statistical distributions are sensitive indicators of the presence of pump current modulation. Under most circumstances, we find that weak low-frequency (in the vicinity of 19 MHz) modulation of the current causes the dropouts to occur preferentially at intervals that are integral multiples of the modulation period. The dropout events can be entrained by the periodic perturbations when the modulation amplitude is large (peak-to-peak amplitude 8% of the dc injection current). We conjecture that modulation induces a dropout when the modulation frequency is equal to the difference in frequency between a mode of the extended cavity laser and its adjacent antimode. We also find that the statistical distribution of the dropout events is unaffected by the periodic perturbations when the modulation frequency is equal to the free spectral range of the external cavity. Numerical simulations of the extended-cavity laser display qualitatively similar behavior. The relationship of these phenomena to stochastic resonance is discussed and a possible use of the modulated laser dynamics for chaos communication is described.

show abstract

FM noise suppression and linewidth reduction in an injection-locked semiconductor laser

Cited by 57 publications

References 7 publications

Analytical stability boundaries of an injected two-polarization semiconductor laser

Analytical stability boundaries of an injected two-polarization semiconductor laser

Frequency Response Enhancement of Optical Injection-Locked Lasers

Entraining power-dropout events in an external-cavity semiconductor laser using weak modulation of the injection current

Contact Info

Product

Resources

About