2017
DOI: 10.1088/1748-0221/12/09/t09006
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Fluxless flip-chip bonding using a lead-free solder bumping technique

Abstract: With the LHC exceeding the nominal instantaneous luminosity, the current barrel pixel detector (BPIX) of the CMS experiment at CERN will reach its performance limits and undergo significant radiation damage. In order to improve detector performance in high luminosity conditions, the entire BPIX is replaced with an upgraded version containing an additional detection layer. Half of the modules comprising this additional layer are produced at DESY using fluxless and lead-free bumping and bonding techniques. Seque… Show more

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Cited by 5 publications
(12 citation statements)
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“…It should be noted that the semi-closed chamber of the flip-chip bonder is not sufficient to process copper surfaces at elevated temperatures due to the oxidation issues. However, in case of Ni-based UBM, the pre- and post-bonding reflow steps can also be performed in the flip-chip bonder [ 27 ]. Moreover, Ni-based UBM with clean and noble surface finishing do not need to go through the cleaning processes but can directly be moved into the solder-ball bumper, as illustrated in Figure 3 .…”
Section: Methodsmentioning
confidence: 99%
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“…It should be noted that the semi-closed chamber of the flip-chip bonder is not sufficient to process copper surfaces at elevated temperatures due to the oxidation issues. However, in case of Ni-based UBM, the pre- and post-bonding reflow steps can also be performed in the flip-chip bonder [ 27 ]. Moreover, Ni-based UBM with clean and noble surface finishing do not need to go through the cleaning processes but can directly be moved into the solder-ball bumper, as illustrated in Figure 3 .…”
Section: Methodsmentioning
confidence: 99%
“…At 200 °C, the reduction reaction is completed by desorbing CO 2 and H 2 , leaving the pure Cu metal. Using an integrated formic-acid module in the flip-chip bonder, tin oxides are effectively removed from the bump surface prior to the tacking process [ 27 ].…”
Section: Methodsmentioning
confidence: 99%
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“…In addition, the hole sizes of vias used to connect the wiring layers have decreased, whereas the thickness of the inter-metal dielectric (IMD) [3], which determines the height of the vias, has hardly changed, resulting in a sharp increase in the aspect ratio (A/R; via height/via hole size) [4,5]. In this situation, the via has reached its filling limit with the conventional Al reflow or 2-step Al deposition process [6,7]. Alternatively, the plug process using chemical vapor deposition tungsten (CVD W) has been applied after deposition of a barrier film [8].…”
Section: Introductionmentioning
confidence: 99%